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Same model may have multiple batches, images only for reference.
PMBTA42DS,125 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PMBTA42DS,125

Part No PMBTA42DS,125
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Arrays
Description TRANS 2NPN 300V 0.1A 6TSOP
Datasheet
PMBTA42DS,125 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity 2 NPN (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 300V
Max Vce (sat) 500mV @ 2mA, 20mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 40 @ 30mA, 10V
Maximum Power Dissipation 420mW
Frequency - Transition 50MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Win Source Part Number 1072703-PMBTA42DS,125
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PMBTA42DS,125 CAD Model

Description

The Nexperia USA Inc. PMBTA42DS,125 is a dual NPN transistor with a maximum collector-emitter breakdown voltage of 300V and a maximum collector current of 100mA.

  • Maximum Collector-Emitter Breakdown Voltage: 300V
  • Maximum Collector Current: 100mA
  • Typical Gain: 40 @ 30mA and 10V
  • Maximum Power Dissipation: 420mW
  • Collector Cut-off Current: 100nA (ICBO)
  • Package: 6-TSOP
  • Frequency Transition: 50MHz
  • Suitable for: Discrete Semiconductor Products

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Quantity Unit Price Ext. Price
450+ $0.1293 $58.1850
1,090+ $0.1062 $115.7580
1,690+ $0.1028 $173.7320
2,325+ $0.0995 $231.3375
3,005+ $0.0963 $289.3815
4,025+ $0.0862 $346.9550
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