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CSD85312Q3E

Part No CSD85312Q3E
Manufacturer Texas Instruments
Catalog FETs - Arrays
Description MOSFET 2N-CH 20V 39A 8VSON / Dual 20 V N-Channel NexFE Power MOSFETs
Sample
Rohs State rohs
ECAD Module
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Manufacturer Texas Instruments
Packaging Reel
FET Type 2 N-Channel (Dual) Common Source
FET Feature Logic Level Gate, 5V Drive
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) at 25°C 39A
Rds On (Maximum) at Id, Vgs 12.4mOhm at 10A, 8V
Vgs(th) (Maximum) at Id 1.4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 15.2nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds 2390pF at 10V
Power - Max 2.5W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package 8-PowerVDFN
Supplier Device Package 8-VSON (3.3x3.3)
Manufacturer Pack Quantity 2,500
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 806492-CSD85312Q3E
Ultra Librarian 3D Model Ultra Librarian CSD85312Q3E CAD Model

Description

Product Overview: Texas Instruments CSD85312Q3E

The Texas Instruments CSD85312Q3E is a state-of-the-art, high-performance, N-Channel NexFET™ power MOSFET designed to deliver optimal power efficiency and reliability for a wide range of applications. This advanced semiconductor device is part of TI's extensive NexFET portfolio, offering engineers a compact, yet powerful solution for their power management designs.

Key Features

  • Low On-Resistance: The CSD85312Q3E boasts an exceptionally low on-resistance (RDS(on)), which translates to reduced conduction losses and improved overall efficiency in power conversion circuits.
  • High Continuous Drain Current: With a high continuous drain current (ID), this MOSFET can handle significant power, making it suitable for high-performance applications.
  • Thermal Management: The device features an advanced thermal design, ensuring that it operates within safe temperature ranges even under high current conditions.
  • SON 3.3mm x 3.3mm Package: The compact footprint of the CSD85312Q3E allows for space-saving designs, which is critical in modern electronic devices where space is at a premium.

Applications

The CSD85312Q3E is versatile and can be used in various applications, including but not limited to:

  • DC/DC Converters
  • Motor Drives
  • Power Supplies
  • Synchronous Buck Circuits
  • Point of Load (POL) Modules

Performance and Quality

Designed with performance in mind, the CSD85312Q3E meets the rigorous standards expected from Texas Instruments. It provides designers with a reliable component that can sustain high efficiency and performance over a broad range of operating conditions. With its robust construction and proven technology, the CSD85312Q3E is an excellent choice for engineers looking to enhance their power management systems.

Conclusion

In summary, the Texas Instruments CSD85312Q3E NexFET™ power MOSFET is a high-quality component that combines low on-resistance, high current capability, and superior thermal performance in a small package. It is an ideal choice for designers who require efficient power management in their electronic projects.

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.0974 $54.8700
115+ $0.9005 $103.5575
175+ $0.8723 $152.6525
240+ $0.8442 $202.6080
310+ $0.8161 $252.9910
415+ $0.7316 $303.6140
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,110 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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