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TSM500P02DCQ Taiwan Semiconductor

Same model may have multiple batches, images only for reference.

TSM500P02DCQ Taiwan Semiconductor

Same model may have multiple batches, images only for reference.

TSM500P02DCQ

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Part No	TSM500P02DCQ
Manufacturer	Taiwan Semiconductor
Catalog	FETs - Arrays
Description	-20V, -4.7A, DUAL P-CHANNEL POWE
Sample
Rohs State
ECAD Module
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Category	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr	Taiwan Semiconductor Corporation
Series	-
Package	Tape & Reel
Product Status	Active
Technology	MOSFET (Metal Oxide)
Configuration	2 P-Channel
FET Feature	Standard
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	4.7A (Tc)
Rds On (Max) @ Id, Vgs	50mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id	0.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	13nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	1230pF @ 10V
Power - Max	620mW (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-VDFN Exposed Pad
Supplier Device Package	6-TDFN (2x2)
Base Product Number	TSM500
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.21.0095
Win Source Part Number	1380169-TSM500P02DCQ
Ultra Librarian 3D Model	Ultra Librarian TSM500P02DCQ CAD Model

Description

The 1380169-TSM500P02DCQ is a MOSFET transistor array from Taiwan Semiconductor Corporation.

Channel Type: P-Channel
Drain to Source Voltage: 20V
Continuous Drain Current: 4.7A @ 25°C
On-Resistance: 50mOhm @ 3A and 4.5V
Gate Threshold Voltage: 0.8V @ 250μA
Gate Charge: 13nC @ 4.5V
Input Capacitance: 1230pF @ 10V
Mounting Type: Surface Mount
Package: 6-VDFN Exposed Pad
Power Rating: 620mW
Operating Temperature: -55°C to 150°C

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
75+	$0.7923	$59.4225
180+	$0.6502	$117.0360
280+	$0.6299	$176.3720
380+	$0.6095	$231.6100
495+	$0.5893	$291.7035
660+	$0.5283	$348.6780

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 1,194 pieces

MOQ: 75 pcs

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