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Same model may have multiple batches, images only for reference.
TSM500P02DCQ Taiwan Semiconductor
Same model may have multiple batches, images only for reference.

TSM500P02DCQ

Part No TSM500P02DCQ
Manufacturer Taiwan Semiconductor
Catalog FETs - Arrays
Description -20V, -4.7A, DUAL P-CHANNEL POWE
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Taiwan Semiconductor Corporation
Series -
Package Tape & Reel
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 P-Channel
FET Feature Standard
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4.7A (Tc)
Rds On (Max) @ Id, Vgs 50mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id 0.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1230pF @ 10V
Power - Max 620mW (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-VDFN Exposed Pad
Supplier Device Package 6-TDFN (2x2)
Base Product Number TSM500
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1380169-TSM500P02DCQ
Ultra Librarian 3D Model Ultra Librarian TSM500P02DCQ CAD Model

Description

The 1380169-TSM500P02DCQ is a MOSFET transistor array from Taiwan Semiconductor Corporation.

  • Channel Type: P-Channel
  • Drain to Source Voltage: 20V
  • Continuous Drain Current: 4.7A @ 25°C
  • On-Resistance: 50mOhm @ 3A and 4.5V
  • Gate Threshold Voltage: 0.8V @ 250μA
  • Gate Charge: 13nC @ 4.5V
  • Input Capacitance: 1230pF @ 10V
  • Mounting Type: Surface Mount
  • Package: 6-VDFN Exposed Pad
  • Power Rating: 620mW
  • Operating Temperature: -55°C to 150°C

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180+ $0.6502 $117.0360
280+ $0.6299 $176.3720
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660+ $0.5283 $348.6780
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