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BSZ0908NDXTMA1

Part No BSZ0908NDXTMA1
Manufacturer Infineon Technologies
Catalog FETs - Arrays
Description SMALL SIGNAL N-CHANNEL MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Infineon Technologies
Series OptiMOS®
Package Bulk
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 4.8A (Ta), 7.6A (Ta)
Rds On (Max) @ Id, Vgs 18mOhm @ 9A, 10V, 9mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 3nC @ 4.5V, 6.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 340pF @ 15V, 730pF @ 15V
Power - Max 700mW (Ta), 860mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Supplier Device Package PG-WISON-8
Base Product Number BSZ0908
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1378017-BSZ0908NDXTMA1
Ultra Librarian 3D Model Ultra Librarian BSZ0908NDXTMA1 CAD Model

Description

The BSZ0908NDXTMA1 is a MOSFET transistor array from Infineon Technologies.

  • Component Type: MOSFET Transistor Array
  • Series: OptiMOS®
  • Package: 8-PowerVDFN
  • Drain to Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 4.8A @ 25°C
  • Maximum On-Resistance (Rds On): 18mOhm @ 9A and 10V
  • Voltage Supply: 7V to 27V
  • Data Rate: 20kBd
  • Application: LINbus
  • Communication: Full Duplex
  • Gate Type: Logic Level
  • Drive Feature: 4.5V Drive

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $5.2389 $52.3890
24+ $4.2986 $103.1664
37+ $4.1642 $154.0754
50+ $4.0299 $201.4950
65+ $3.8956 $253.2140
86+ $3.4926 $300.3636
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 32,400 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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