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Same model may have multiple batches, images only for reference.
BSZ0908NDXTMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

BSZ0908NDXTMA1

Part No BSZ0908NDXTMA1
Manufacturer Infineon Technologies
Catalog FETs - Arrays
Description SMALL SIGNAL N-CHANNEL MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Infineon Technologies
Series OptiMOS®
Package Bulk
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 4.8A (Ta), 7.6A (Ta)
Rds On (Max) @ Id, Vgs 18mOhm @ 9A, 10V, 9mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 3nC @ 4.5V, 6.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 340pF @ 15V, 730pF @ 15V
Power - Max 700mW (Ta), 860mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Supplier Device Package PG-WISON-8
Base Product Number BSZ0908
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1378017-BSZ0908NDXTMA1
Ultra Librarian 3D Model Ultra Librarian BSZ0908NDXTMA1 CAD Model

Description

The BSZ0908NDXTMA1 is a MOSFET transistor array from Infineon Technologies.

  • Component Type: MOSFET Transistor Array
  • Series: OptiMOS®
  • Package: 8-PowerVDFN
  • Drain to Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 4.8A @ 25°C
  • Maximum On-Resistance (Rds On): 18mOhm @ 9A and 10V
  • Voltage Supply: 7V to 27V
  • Data Rate: 20kBd
  • Application: LINbus
  • Communication: Full Duplex
  • Gate Type: Logic Level
  • Drive Feature: 4.5V Drive

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