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STW20N65M5

Part No STW20N65M5
Manufacturer STMicroelectronics
Catalog FETs - Single
Description N-channel 650 V, 0.160 typ., 18 A MDmesh V Power MOSFET in D2PAK, I2PAK | MOSFET N-CH 650V 18A TO247
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 650V
Id - Continuous Drain Current 18A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 190mOhm at 9A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 45nC at 10V
Gate Source Voltage (Maximum) ±25V
Input Capacitance (Ciss) (Maximum) at Vds 1345pF at 100V
Power Dissipation (Maximum) 130W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-247
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 30
MSL Level 1 (Unlimited)
Win Source Part Number 1262350-STW20N65M5
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STW20N65M5 CAD Model

Description

STW20N65M5 - STMicroelectronics Power MOSFET

The STW20N65M5 is a high-performance, N-channel Power MOSFET brought to you by STMicroelectronics, a global semiconductor leader known for its innovative and reliable products. This advanced power MOSFET is designed to meet a wide range of energy-efficient applications, particularly in the realm of power supply and switching applications.

Key Features

  • Low On-Resistance: The STW20N65M5 boasts an extremely low on-resistance (R<sub>DS(on)), which significantly reduces conduction losses, making it ideal for high-efficiency power conversion.
  • High Current Capability: With a continuous drain current (I<sub>D) of 20A, this power MOSFET can handle high current loads, suitable for demanding applications.
  • High Voltage Rating: The device is rated for a maximum drain-source voltage (V<sub>DSS) of 650V, providing a wide safety margin for applications subject to high voltage transients.
  • Low Gate Charge: The optimized gate charge (Q<sub>g) ensures low switching losses, contributing to the overall efficiency of the power management system.
  • 100% Avalanche Tested: Each unit is rigorously tested for avalanche ruggedness, ensuring reliability and robustness in harsh conditions.

Applications

The STW20N65M5 is versatile and can be used in a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • Uninterruptible Power Supplies (UPS)
  • Motor Control Drives
  • High-Performance DC-DC Converters
  • LED Lighting Solutions

Quality and Environmental Compliance

STMicroelectronics is committed to delivering high-quality products that also meet environmental standards. The STW20N65M5 is no exception, as it complies with the RoHS directive, ensuring that it is free from hazardous substances.

Overall, the STW20N65M5 from STMicroelectronics is an excellent choice for designers who require a MOSFET that offers high efficiency, reliability, and performance for their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.0755 $62.2650
70+ $1.7029 $119.2030
110+ $1.6498 $181.4780
145+ $1.5966 $231.5070
190+ $1.5433 $293.2270
255+ $1.3837 $352.8435
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 31,000 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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