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VS-FB190SA10

Name: VS-FB190SA10
Brand: Vishay
SKU: 697180
Availability: InStock
Rating: 4.84 (5 reviews)

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Part No	VS-FB190SA10
Manufacturer	Vishay
Catalog	FETs - Single
Description	Power MOSFET, 190 A \| MOSFET N-CH 100V 190A SOT227
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Vishay Semiconductor Diodes Division
Packaging	Tube
Transistor Polarity	N-Channel
Technology	MOSFET
Vds - Drain-Source Breakdown Voltage	100V
Id - Continuous Drain Current	190A
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Maximum) at Id, Vgs	6.5mOhm at 180A, 10V
Gate Source Voltage(th) (Maximum) at Id	4.35V at 250μA
Gate Charge (Qg) (Maximum) at Vgs	250nC at 10V
Gate Source Voltage (Maximum)	±20V
Input Capacitance (Ciss) (Maximum) at Vds	10700pF at 25V
Power Dissipation (Maximum)	568W
Temperature Range - Operating	-55°C ~ 150°C
Mounting Style	Chassis Mount
Supplier Device Package	SOT-227
Manufacturer Package	SOT-227-4, miniBLOC
Manufacturer Pack Quantity	10
MSL Level	1 (Unlimited)
Win Source Part Number	1279868-VS-FB190SA10
Manufacturer Homepage	www.vishay.com
Popularity	Medium
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian VS-FB190SA10 CAD Model

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Description

The Vishay Semiconductor Diodes Division MOSFET is a high-performance electronic component that is designed for use in discrete semiconductor products.

Drive Voltage: 10V
Temperature Range: -55°C to 150°C
Maximum Power Dissipation: 568W
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current: 190A
Input Capacitance: 10700pF @ 25V
Gate Charge (Qg): 250nC @ 10V
Gate-Source Voltage (Maximum): ±20V
FET Feature: N-channel
Transistor Polarity: N-channel
Manufacturer Package: SOT-227-4, miniBLOC
Device Package: SOT-227
Mounting Style: Chassis Mount
Supplier Device Package: SOT-227
Supplied in: Tube
Manufacturer Pack Quantity: 10

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