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Same model may have multiple batches, images only for reference.
VS-FB190SA10 Real Image
Same model may have multiple batches, images only for reference.

VS-FB190SA10

Part No VS-FB190SA10
Manufacturer Vishay
Catalog FETs - Single
Description Power MOSFET, 190 A | MOSFET N-CH 100V 190A SOT227
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Semiconductor Diodes Division
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 190A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 6.5mOhm at 180A, 10V
Gate Source Voltage(th) (Maximum) at Id 4.35V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 250nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 10700pF at 25V
Power Dissipation (Maximum) 568W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Chassis Mount
Supplier Device Package SOT-227
Manufacturer Package SOT-227-4, miniBLOC
Manufacturer Pack Quantity 10
MSL Level 1 (Unlimited)
Win Source Part Number 1279868-VS-FB190SA10
Manufacturer Homepage www.vishay.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian VS-FB190SA10 CAD Model

Description

The Vishay Semiconductor Diodes Division MOSFET is a high-performance electronic component that is designed for use in discrete semiconductor products.

  • Drive Voltage: 10V
  • Temperature Range: -55°C to 150°C
  • Maximum Power Dissipation: 568W
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 190A
  • Input Capacitance: 10700pF @ 25V
  • Gate Charge (Qg): 250nC @ 10V
  • Gate-Source Voltage (Maximum): ±20V
  • FET Feature: N-channel
  • Transistor Polarity: N-channel
  • Manufacturer Package: SOT-227-4, miniBLOC
  • Device Package: SOT-227
  • Mounting Style: Chassis Mount
  • Supplier Device Package: SOT-227
  • Supplied in: Tube
  • Manufacturer Pack Quantity: 10

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