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Same model may have multiple batches, images only for reference.
IXFK140N20P Real Image
Same model may have multiple batches, images only for reference.

IXFK140N20P

Part No IXFK140N20P
Manufacturer IXYS
Catalog FETs - Single
Description PolarHT HiPerFET Power MOSFET | MOSFET N-CH 200V 140A TO-264
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Bulk
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 200V
Id - Continuous Drain Current 140A
Drive Voltage (Max Rds On, Min Rds On) 10V, 15V
Rds On (Maximum) at Id, Vgs 18mOhm at 70A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 4mA
Gate Charge (Qg) (Maximum) at Vgs 240nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 7500pF at 25V
Power Dissipation (Maximum) 830W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-264AA (IXFK)
Manufacturer Package TO-264-3, TO-264AA
Manufacturer Pack Quantity 25
MSL Level 1 (Unlimited)
Win Source Part Number 1191078-IXFK140N20P
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXFK140N20P CAD Model

Description

IXFK140N20P is a N-channel MOSFET from IXYS.

  • Drain-Source Breakdown Voltage: 200V
  • Power Dissipation: 830W
  • Package: TO-264AA
  • Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
  • Operating Temperature: -55°C to 175°C
  • Maximum Continuous Drain Current: 140A
  • Maximum Rds On @ Id, Vgs: 18mOhm @ 70A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V

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4+ $17.1425 $68.5700
9+ $14.0657 $126.5913
13+ $13.6262 $177.1406
18+ $13.1866 $237.3588
23+ $12.7470 $293.1810
31+ $11.4284 $354.2804
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