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STPSC8TH13TI

Part No STPSC8TH13TI
Manufacturer STMicroelectronics
Catalog Diodes, Rectifiers - Arrays
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Diodes - Rectifiers - Arrays
Mfr STMicroelectronics
Package Tube
Diode Configuration 1 Pair Series Connection
Diode Type Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) (per Diode) 8A
Voltage - Forward (Vf) (Max) @ If 1.75 V @ 8 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 80 µA @ 650 V
Operating Temperature - Junction -40°C ~ 175°C
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB Insulated
Base Product Number STPSC8
Other Names 497-14201-5
Standard Package 50
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Win Source Part Number 1282899-STPSC8TH13TI
Ultra Librarian 3D Model Ultra Librarian STPSC8TH13TI CAD Model

Description

STPSC8TH13TI Silicon Carbide Power Schottky Diode

The STPSC8TH13TI is a high-performance silicon carbide (SiC) power Schottky diode designed and manufactured by STMicroelectronics, a leader in semiconductor solutions. This diode is tailored for efficiency, making it an ideal choice for applications requiring fast switching, low losses, and high thermal performance.

Key Features

  • High Voltage Rating: The STPSC8TH13TI can withstand voltages up to 650V, making it suitable for a variety of power applications.
  • Low On-State Voltage: This diode offers a very low forward voltage drop (VF), which reduces power losses and improves efficiency during operation.
  • High Surge Current Capability: With its robust design, the STPSC8TH13TI can handle high surge currents, ensuring reliability under stressful conditions.
  • No Reverse Recovery: The zero reverse recovery characteristic of SiC diodes ensures minimal switching losses and reduces electromagnetic interference (EMI).
  • High-Temperature Operation: The device is capable of operating at junction temperatures as high as 175°C, ensuring stability and performance even under high thermal conditions.

Applications

The STPSC8TH13TI is versatile and can be used in a wide range of applications, including:

  • Power supplies and adapters
  • Solar inverters
  • Switch-mode power supplies (SMPS)
  • Power factor correction (PFC) circuits
  • Electric vehicle (EV) charging stations
  • Uninterruptible power supplies (UPS)

Package and Quality

The STPSC8TH13TI is housed in an H²PAK-2 package, which offers a reduced footprint on PCBs and is designed for easy mounting and heat dissipation. STMicroelectronics is committed to high-quality standards, and this product is no exception, ensuring reliability and performance for critical applications.

By integrating the STPSC8TH13TI into your design, you benefit from the superior performance of SiC technology, which includes higher efficiency, faster switching, and greater thermal conductivity compared to traditional silicon devices. This diode is an excellent choice for designers looking to enhance system performance while reducing energy consumption and heat generation.

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