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STH80N10F7-2

Part No STH80N10F7-2
Manufacturer STMicroelectronics
Catalog FETs - Single
Description MOSFET N-CH 100V 80A H2PAK-2 / Ultra low on-resistance
Sample
Rohs State rohs
ECAD Module
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Manufacturer STMicroelectronics
Packaging Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 9.5mOhm at 40A, 10V
Vgs(th) (Maximum) at Id 4.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 45nC at 10V
Maximum Vgs ±20V
Input Capacitance (Ciss) (Maximum) at Vds 3100pF at 50V
Power Dissipation (Maximum) 110W (Tc)
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package H2Pak-2
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Part Number Series STH80N
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 803170-STH80N10F7-2
Ultra Librarian 3D Model Ultra Librarian STH80N10F7-2 CAD Model

Description

STH80N10F7-2 Power MOSFET by STMicroelectronics

The STH80N10F7-2 is a high-performance N-channel Power MOSFET designed by the renowned semiconductor manufacturer STMicroelectronics. This device is part of the STripFET™ F7 series, which is known for its excellent on-state resistance (RDS(on)) and superior switching performance. The STH80N10F7-2 is an ideal choice for a wide range of power applications, including but not limited to, DC/DC converters, motor control, and power management solutions.

One of the key features of the STH80N10F7-2 is its low threshold voltage, ensuring minimal conduction losses and enhancing the overall efficiency of the system in which it is deployed. With a maximum continuous drain current (ID) of 80A, this Power MOSFET can handle high current loads, making it suitable for demanding applications.

The STH80N10F7-2 boasts a maximum drain-source voltage (VDS) of 100V, providing a generous margin for voltage spikes and surges, thereby ensuring reliability and longevity in various operating conditions. Its maximum RDS(on) is as low as 8.5 mΩ at 10 V, which is indicative of the MOSFET's efficiency in reducing power dissipation.

The device comes in an industry-standard TO-220 package, which is widely accepted for its ease of mounting and effective thermal performance. The package is designed to optimize the thermal resistance and to facilitate the best heat dissipation possible, ensuring the MOSFET operates within its safe temperature range even under high power conditions.

Additional features of the STH80N10F7-2 include a very low intrinsic capacitance, which contributes to its fast switching capabilities, and an enhanced avalanche ruggedness, providing robustness against harsh operating scenarios. This makes it an excellent choice for applications that require a combination of high efficiency, reliability, and performance.

STMicroelectronics is committed to environmental sustainability, and the STH80N10F7-2 is designed with this in mind. It is compliant with the European Union's Restriction of Hazardous Substances (RoHS) directive, making it an environmentally friendly option for manufacturers and designers looking to create green products.

In summary, the STH80N10F7-2 Power MOSFET from STMicroelectronics represents a blend of efficiency, performance, and reliability, suitable for a variety of high-power applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.5564 $62.2560
95+ $1.2771 $121.3245
145+ $1.2372 $179.3940
195+ $1.1973 $233.4735
250+ $1.1573 $289.3250
335+ $1.0377 $347.6295
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,076 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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