STH80N10F7-2 Power MOSFET by STMicroelectronics
The STH80N10F7-2 is a high-performance N-channel Power MOSFET designed by the renowned semiconductor manufacturer STMicroelectronics. This device is part of the STripFET™ F7 series, which is known for its excellent on-state resistance (RDS(on)) and superior switching performance. The STH80N10F7-2 is an ideal choice for a wide range of power applications, including but not limited to, DC/DC converters, motor control, and power management solutions.
One of the key features of the STH80N10F7-2 is its low threshold voltage, ensuring minimal conduction losses and enhancing the overall efficiency of the system in which it is deployed. With a maximum continuous drain current (ID) of 80A, this Power MOSFET can handle high current loads, making it suitable for demanding applications.
The STH80N10F7-2 boasts a maximum drain-source voltage (VDS) of 100V, providing a generous margin for voltage spikes and surges, thereby ensuring reliability and longevity in various operating conditions. Its maximum RDS(on) is as low as 8.5 mΩ at 10 V, which is indicative of the MOSFET's efficiency in reducing power dissipation.
The device comes in an industry-standard TO-220 package, which is widely accepted for its ease of mounting and effective thermal performance. The package is designed to optimize the thermal resistance and to facilitate the best heat dissipation possible, ensuring the MOSFET operates within its safe temperature range even under high power conditions.
Additional features of the STH80N10F7-2 include a very low intrinsic capacitance, which contributes to its fast switching capabilities, and an enhanced avalanche ruggedness, providing robustness against harsh operating scenarios. This makes it an excellent choice for applications that require a combination of high efficiency, reliability, and performance.
STMicroelectronics is committed to environmental sustainability, and the STH80N10F7-2 is designed with this in mind. It is compliant with the European Union's Restriction of Hazardous Substances (RoHS) directive, making it an environmentally friendly option for manufacturers and designers looking to create green products.
In summary, the STH80N10F7-2 Power MOSFET from STMicroelectronics represents a blend of efficiency, performance, and reliability, suitable for a variety of high-power applications.