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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr STMicroelectronics
Package Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 72 A
Current - Collector Pulsed (Icm) 160 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 40A
Power - Max 230 W
Switching Energy 765µJ (on), 410µJ (off)
Input Type Standard
Gate Charge 153 nC
Td (on/off) @ 25°C 18ns/72ns
Test Condition 400V, 40A, 4.7Ohm, 15V
Reverse Recovery Time (trr) 75 ns
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247 Long Leads
Base Product Number STGWA40
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 497-19785
Standard Package 30
Win Source Part Number 1216805-STGWA40H65DFB2
Ultra Librarian 3D Model Ultra Librarian STGWA40H65DFB2 CAD Model

Description

STGWA40H65DFB2 - STMicroelectronics

The STGWA40H65DFB2 is a state-of-the-art power semiconductor component from STMicroelectronics, a global leader in the design and manufacturing of electronic components. This device is a member of the MDmesh™ DM6 650 V series, which features advanced super-junction technology that is optimized for high-performance applications requiring efficient power conversion and management.

Key Features:

  • High Voltage Capability: The STGWA40H65DFB2 is rated for a breakdown voltage of 650 V, making it suitable for various industrial, consumer, and computing applications that require high voltage operation.
  • Low On-Resistance: With an on-resistance of just 0.065 Ω, this power MOSFET ensures minimal conduction losses, which translates to higher efficiency in power conversion systems.
  • Fast Switching Performance: The device's fast switching characteristics are ideal for applications that demand quick response times, such as switching power supplies and motor control circuits.
  • Enhanced Power Handling: The STGWA40H65DFB2 can handle a continuous drain current of 40 A, providing robust power handling capability for demanding loads.
  • Improved Ruggedness: The MOSFET is designed for enhanced ruggedness and reliability, featuring a high dv/dt capability and improved immunity to the effects of temperature variations.

Applications:

The versatility of the STGWA40H65DFB2 makes it an excellent choice for a wide range of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting Solutions
  • DC-DC Converters
  • Power Factor Correction (PFC) Circuits
  • Motor Drives and Inverters
  • Welding Equipment

The STGWA40H65DFB2 is housed in an H2PAK-2 package, which provides an optimal balance between a compact form factor and thermal performance, ensuring that the device can be used in space-constrained applications without compromising on power dissipation capabilities.

With its advanced technical specifications and robust design, the STGWA40H65DFB2 from STMicroelectronics represents a reliable and efficient solution for designers looking to improve the performance and efficiency of their power management systems.

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Quantity Unit Price Ext. Price
11+ $5.5651 $61.2161
22+ $5.2128 $114.6816
34+ $5.0368 $171.2512
48+ $4.6845 $224.8560
63+ $4.5084 $284.0292
78+ $4.3323 $337.9194
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Availability: 54,880 pieces
MOQ: 11 pcs
Order Increment : 1 piece
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