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STGW45HF60WDI

Part No STGW45HF60WDI
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description 45 A, 600 V ultra fast IGBT with low drop diode
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 70A
Current - Collector Pulsed (Icm) 150A
Vce(on) (Maximum) @ Vge, Ic 2.5V @ 15V, 30A
Power - Max 250W
Switching Energy 330μJ (off)
Input Type Standard
Gate Charge 160nC
Td (on/off) @ 25°C -/145ns
Test Condition 400V, 30A, 4.7 Ohm, 15V
Reverse Recovery Time (trr) 90ns
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Package TO-247-3
Manufacturer Package TO-247-3
Win Source Part Number 1261049-STGW45HF60WDI
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Quantity per package 30
Ultra Librarian 3D Model Ultra Librarian STGW45HF60WDI CAD Model

Description

STGW45HF60WDI - High-Speed IGBT from STMicroelectronics

The STGW45HF60WDI is a state-of-the-art Insulated Gate Bipolar Transistor (IGBT) produced by STMicroelectronics, a global leader in semiconductor solutions. This IGBT is designed for a wide range of high-power applications that require fast switching and high efficiency, such as inverter systems, UPS, solar inverters, and motor drives.

With a maximum collector-emitter voltage of 600V and a continuous collector current rating of 45A at 25°C, the STGW45HF60WDI is capable of handling significant power levels. The device also boasts a low collector-emitter saturation voltage (V<sub>CE(sat)), which enhances its efficiency by minimizing on-state power dissipation.

The STGW45HF60WDI is part of STMicroelectronics' series of field stop trench IGBTs, which means it incorporates advanced technology that combines the benefits of both the MOSFET and bipolar transistor. The result is an IGBT that offers a very tight parameter distribution coupled with a high ruggedness capability, ensuring reliability and performance consistency.

One of the key features of this IGBT is its high-speed switching performance. The STGW45HF60WDI can switch on and off rapidly, which is critical for applications that require high-frequency operation. This fast switching capability also helps to reduce electromagnetic interference (EMI), making the device suitable for noise-sensitive applications.

Thermal management is also a strong point for the STGW45HF60WDI. The device is housed in a TO-247 long leads package, which provides excellent heat dissipation characteristics. This helps to maintain performance even under high load conditions and extends the longevity of the device.

For design flexibility, the STGW45HF60WDI includes a co-packaged fast recovery diode. This feature simplifies circuit design by reducing the number of components required and improves overall system efficiency.

STMicroelectronics also ensures that the STGW45HF60WDI meets stringent quality and reliability standards. It is RoHS compliant and designed to meet the environmental and technical demands of the modern electronic industry.

In summary, the STGW45HF60WDI from STMicroelectronics is a robust, high-performance IGBT that is ideal for designers looking to optimize their power applications for speed, efficiency, and reliability.

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Quantity Unit Price Ext. Price
7+ $8.0294 $56.2058
16+ $6.5883 $105.4128
24+ $6.3824 $153.1776
33+ $6.1765 $203.8245
42+ $5.9706 $250.7652
57+ $5.3530 $305.1210
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Availability: 2,790 pieces
MOQ: 7 pcs
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