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STGW40H120DF2

Part No STGW40H120DF2
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description Very fast recovery antiparallel diode
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Maximum) 1200V
Current - Collector (Ic) (Maximum) 80A
Current - Collector Pulsed (Icm) 160A
Vce(on) (Maximum) @ Vge, Ic 2.6V @ 15V, 40A
Power - Max 468W
Switching Energy 1mJ (on), 1.32mJ (off)
Input Type Standard
Gate Charge 187nC
Td (on/off) @ 25°C 18ns/152ns
Test Condition 600V, 40A, 10 Ohm, 15V
Reverse Recovery Time (trr) 488ns
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Package TO-247-3
Manufacturer Package TO-247
Win Source Part Number 1261047-STGW40H120DF2
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2025
Ultra Librarian 3D Model Ultra Librarian STGW40H120DF2 CAD Model

Description

The STGW40H120DF2 is a state-of-the-art IGBT (Insulated Gate Bipolar Transistor) developed by STMicroelectronics, designed to cater to the increasing demands of high-efficiency, high-speed switching applications. This device is a part of ST's performance-driven IGBT product line, offering a robust and reliable solution for a wide range of power electronics applications such as inverters, converters, motor drives, and many other types of power control circuits.

Key Features

  • High Current Rating: The STGW40H120DF2 is capable of handling continuous collector currents up to 40A, making it suitable for high-power applications.
  • High Voltage Capability: With a collector-emitter breakdown voltage of 1200V, this IGBT can be used in circuits with high voltage requirements, providing excellent voltage headroom for safe operation.
  • Low On-State Voltage Drop: The device exhibits a low V<sub>CE(sat), reducing conduction losses and improving overall system efficiency.
  • Short-Circuit Rating: It features a short-circuit withstand time of 10μs, offering protection against sudden electrical faults and enhancing the robustness of the application.
  • Co-Packaged Diode: This IGBT comes with a co-packaged fast recovery anti-parallel diode, which helps in reducing component count and simplifying circuit design.
  • High Switching Speed: The fast switching characteristics minimize switching losses and enable operation at higher frequencies, which can lead to smaller and more cost-effective designs.

Applications

The STGW40H120DF2 is designed for a variety of applications, particularly where high efficiency and fast switching are required. It is ideal for:

  • Uninterruptible Power Supplies (UPS)
  • High-performance AC/DC converters
  • Welding equipment
  • Induction heating systems
  • Solar inverters
  • Electric vehicle (EV) charging stations

Conclusion

With its combination of high voltage and current capabilities, low conduction and switching losses, and integrated fast recovery diode, the STGW40H120DF2 from STMicroelectronics is an excellent choice for designers looking to optimize their power control systems for performance and reliability.

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