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SKW20N60HS

Part No SKW20N60HS
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description High Speed IGBT in NPT-technology
Sample
Rohs State rohs
ECAD Module
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Manufacturer Infineon Technologies
Win Source Part Number 1250476-SKW20N60HS
Manufacturer Homepage www.infineon.com
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SKW20N60HS CAD Model

Description

The SKW20N60HS is a CoolMOS™ High Speed power MOSFET from Infineon Technologies. This MOSFET is designed for high-efficiency switching applications, offering reduced switching losses and improved thermal performance.

Applications:

  • Server and Telecom Power Supplies: Used in high-power SMPS (Switched Mode Power Supplies)
  • Lighting Systems: Suitable for high-frequency ballast topologies for HID lamps and LED drivers.
  • Industrial Power Supplies: Applied in welding equipment, UPS systems and renewable energy inverters.
  • Solar Inverters: Component for DC-AC conversion.

Features:

  • 600V CoolMOS™ Technology: Superjunction MOSFET for low on-resistance and high breakdown voltage.
  • High Switching Speed: Optimized for fast turn-on and turn-off times.
  • Low Gate Charge (Qg): Reduces gate drive power requirements.
  • Integrated Gate Resistor (Rg): Simplifies gate drive circuit design and minimizes ringing.
  • Pb-free and RoHS compliant: Environmentally friendly.

Benefits:

  • High Efficiency: Reduced switching and conduction losses result in significant efficiency improvements.
  • Simplified Design: Integrated gate resistor facilitates easier and more reliable gate drive design.
  • High Power Density: Allows for smaller and more compact power supply designs.
  • Improved Thermal Performance: Low on-resistance and optimized package enable better heat dissipation.
  • Robustness and Reliability: High breakdown voltage and avalanche capability ensure reliable operation under demanding conditions.

Additional Details:

The SKW20N60HS is characterized by its low on-resistance (RDS(on)) and fast switching capabilities. Key electrical characteristics include the drain-source breakdown voltage (VDS), gate-source voltage (VGS), continuous drain current (ID), and pulsed drain current (IDM). The device features a body diode with a low reverse recovery charge (Qrr). It's available in a through-hole or surface-mount package depending on the specific variant. Designers should consult the datasheet for detailed specifications and application guidelines. Proper heatsinking is often required to manage thermal dissipation at high power levels. Careful PCB layout is critical to minimize parasitic inductance and optimize switching performance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $3.3460 $60.2280
43+ $2.7454 $118.0522
66+ $2.6600 $175.5600
90+ $2.5745 $231.7050
117+ $2.4879 $291.0843
156+ $2.2303 $347.9268
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 32,500 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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