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FGA30N120FTD

Part No FGA30N120FTD
Manufacturer Fairchild/ON Semiconductor
Catalog IGBTs - Single
Description 1200V, 30A Trench IGBT
Sample
Rohs State rohs
ECAD Module
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Manufacturer Fairchild/ON Semiconductor
Win Source Part Number 1174158-FGA30N120FTD
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FGA30N120FTD CAD Model

Description

The FGA30N120FTD is a 1200V Field Stop IGBT (Insulated Gate Bipolar Transistor) manufactured by Fairchild Semiconductor, now part of ON Semiconductor. This IGBT combines the advantages of both MOSFETs and bipolar transistors, offering high input impedance and low conduction losses. It's designed for applications requiring efficient and fast switching, such as power inverters and motor drives.

Applications

  • Uninterruptible Power Supplies (UPS): Employed in UPS systems to provide reliable power backup during outages.
  • Power Inverters: Used in solar inverters, wind turbine inverters, and general-purpose power inverters for converting DC to AC power.
  • Motor Drives: Integrated into motor drives for controlling the speed and torque of electric motors.
  • Welding Equipment: Found in welding machines to provide precise control of the welding current.
  • Induction Heating: Used in induction heating systems for efficient and controlled heating of materials.

Features

  • High Voltage Capability: Designed to handle voltages up to 1200V, suitable for high-voltage applications.
  • Low Saturation Voltage (VCE(sat)): Minimizes conduction losses, increasing efficiency.
  • Fast Switching Speed: Enables high-frequency switching, reducing switching losses.
  • Field Stop Technology: Optimizes the trade-off between conduction and switching losses.
  • Robust Avalanche Capability: Provides increased robustness against voltage transients.

Benefits

  • High Efficiency: Low saturation voltage and fast switching speed contribute to high energy efficiency.
  • Improved System Reliability: Robust avalanche capability enhances system reliability and protects against voltage spikes.
  • Reduced Heat Dissipation: Low conduction and switching losses result in reduced heat generation.
  • Simplified Design: Easy to drive and control, simplifying the design of power electronics systems.
  • Compact Size: Available in a compact package, allowing for smaller and more efficient designs.

Additional Details

The FGA30N120FTD IGBT uses Field Stop technology to achieve a balance between low conduction losses and fast switching speeds. It's available in a TO-247 package, which offers excellent thermal performance. The device is designed to operate over a wide temperature range. ON Semiconductor provides comprehensive datasheets and application notes for their IGBTs, making it easier for engineers to design and implement power electronics systems. The FGA30N120FTD is suitable for high-power applications. The IGBT is environmentally friendly, as it is RoHS compliant.

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