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STGP4M65DF2

Part No STGP4M65DF2
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr STMicroelectronics
Series M
Package Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 8 A
Current - Collector Pulsed (Icm) 16 A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 4A
Power - Max 68 W
Switching Energy 40µJ (on), 136µJ (off)
Input Type Standard
Gate Charge 15.2 nC
Td (on/off) @ 25°C 12ns/86ns
Test Condition 400V, 4A, 47Ohm, 15V
Reverse Recovery Time (trr) 133 ns
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220
Base Product Number STGP4
Other Names 497-17548,-1138-STGP4M65DF2
Standard Package 50
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277360-STGP4M65DF2
Ultra Librarian 3D Model Ultra Librarian STGP4M65DF2 CAD Model

Description

STGP4M65DF2 - IGBT from STMicroelectronics

The STGP4M65DF2 is a cutting-edge insulated gate bipolar transistor (IGBT) developed by STMicroelectronics, a global semiconductor leader known for its innovative and reliable products. This IGBT is designed to offer a high level of performance for a wide range of power applications, including motor drives, renewable energy inverters, and power supplies.

With a maximum collector-emitter voltage of 650V and a collector current rating of 4A, the STGP4M65DF2 is capable of handling high power levels while maintaining efficiency and reliability. Its low on-state voltage drop and optimized switching characteristics ensure minimal power losses during operation, making it an energy-efficient choice for designers.

The device features STMicroelectronics' advanced trench gate field-stop technology, which provides an improved trade-off between switching speed and saturation voltage. This technology enables the IGBT to achieve low conduction losses and high switching performance simultaneously. Additionally, the STGP4M65DF2 is characterized by a very tight parameter distribution, resulting in consistent performance and ease of paralleling IGBTs when higher current handling is required.

The STGP4M65DF2 comes in a TO-220 package, which is widely used and favored for its ease of installation and excellent thermal performance. The package is designed to offer good heat dissipation, ensuring the IGBT operates within its specified temperature range even under high power conditions. Moreover, the device is RoHS compliant and halogen-free, making it an environmentally friendly option that meets current regulations for electronic components.

STMicroelectronics provides comprehensive technical support for the STGP4M65DF2, including detailed datasheets, application notes, and simulation models. This support helps engineers to quickly and accurately integrate the IGBT into their designs, reducing time-to-market for their products. With its robust design, high efficiency, and strong technical backing, the STGP4M65DF2 is a reliable and powerful component for any power electronic system.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.9196 $57.5880
65+ $1.5750 $102.3750
100+ $1.5258 $152.5800
140+ $1.4766 $206.7240
180+ $1.4274 $256.9320
235+ $1.2797 $300.7295
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,618 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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