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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr STMicroelectronics
Series M
Package Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 20 A
Current - Collector Pulsed (Icm) 40 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 10A
Power - Max 30 W
Switching Energy 120µJ (on), 270µJ (off)
Input Type Standard
Gate Charge 28 nC
Td (on/off) @ 25°C 19ns/91ns
Test Condition 400V, 10A, 22Ohm, 15V
Reverse Recovery Time (trr) 96 ns
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Supplier Device Package TO-220FP
Base Product Number STGF10
Other Names STGF10M65DF2,497-19150
Standard Package 50
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277362-STGF10M65DF2
Ultra Librarian 3D Model Ultra Librarian STGF10M65DF2 CAD Model

Description

The STGF10M65DF2 is a high-performance, N-channel VHV (Very High Voltage) SuperMESH™ Power MOSFET designed and manufactured by STMicroelectronics, a global semiconductor leader. This advanced power MOSFET is engineered to deliver superior switching performance and high efficiency in a wide range of applications. The device is part of ST's MDmesh™ II Plus Low Qg series, which is renowned for its excellent on-state resistance (R<sub>DS(on)) combined with a low gate charge (Q<sub>g), making it an ideal choice for high-efficiency solutions.

With a breakdown voltage of 650V, the STGF10M65DF2 ensures robust operation even under high voltage conditions, making it suitable for applications such as switch-mode power supplies (SMPS), LED lighting, welding, solar inverters, and other power conversion systems. Its enhanced power density and reliability are attributed to ST's state-of-the-art MDmesh™ technology, which also contributes to reduced conduction losses and improved switching behavior.

The device features a maximum continuous drain current (I<sub>D) of 7.3A at 25°C, which ensures it can handle significant power without overheating. Its low threshold voltage (V<sub>th) enhances the driveability and allows for better control at low gate voltages. The STGF10M65DF2 also boasts a fast recovery diode, which is critical for high-speed switching and further enhances the overall efficiency of the system in which it is used.

Packaged in a TO-220FP fully molded isolated package, the STGF10M65DF2 offers excellent thermal performance and is easy to mount on a heatsink for thermal management. This package also provides good electrical isolation, ensuring safe operation in high voltage environments.

STMicroelectronics provides comprehensive technical support and documentation for the STGF10M65DF2, including datasheets, application notes, and design tools, to assist engineers in integrating this device into their designs effectively. With its outstanding performance and reliability, the STGF10M65DF2 is a testament to STMicroelectronics' commitment to providing innovative power solutions that meet the evolving needs of the electronics industry.

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Pricing & Ordering

Quantity Unit Price Ext. Price
7+ $7.6614 $53.6298
16+ $6.2863 $100.5808
25+ $6.0898 $152.2450
34+ $5.8934 $200.3756
44+ $5.6969 $250.6636
59+ $5.1076 $301.3484
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 10,000 pieces
MOQ: 7 pcs
Order Increment : 1 pieza
*Need More Quantity? *Request a Bulk Quantity Quotation?

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