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STGD20N45LZAG

Part No STGD20N45LZAG
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description POWER TRANSISTORS  /  IGBT 450 V 25 A 125 W Surface Mount D-PAK (TO-252)
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr STMicroelectronics
Series Automotive, AEC-Q101
Package Tape & Reel
Voltage - Collector Emitter Breakdown (Max) 450 V
Current - Collector (Ic) (Max) 25 A
Current - Collector Pulsed (Icm) 50 A
Vce(on) (Max) @ Vge, Ic 1.25V @ 4V, 6A
Power - Max 125 W
Input Type Logic
Gate Charge 26 nC
Td (on/off) @ 25°C 1.1µs/4.6µs
Test Condition 300V, 10A, 1kOhm, 5V
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package D-PAK (TO-252)
Base Product Number STGD20
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 497-17644-6,497-17644-1,497-17644-2
Standard Package 2,500
Win Source Part Number 1143673-STGD20N45LZAG
Ultra Librarian 3D Model Ultra Librarian STGD20N45LZAG CAD Model

Description

The STGD20N45LZAG is a state-of-the-art power MOSFET designed and manufactured by STMicroelectronics, a global semiconductor leader. This device is part of STMicroelectronics' MDmesh™ DM2 series, which is renowned for its fast recovery diode and low gate charge. The STGD20N45LZAG is specifically engineered to deliver high efficiency and reliability in a wide range of applications, including switch-mode power supplies (SMPS), lighting, welding, and high-performance power management systems.

Key Features

  • Voltage Rating: The STGD20N45LZAG boasts a drain-source voltage (V<sub>DS) of 450 V, making it suitable for high-voltage applications.
  • Current Capacity: It has a continuous drain current (I<sub>D) of 20 A at 25°C, ensuring it can handle significant power levels.
  • Low On-Resistance: The on-resistance (R<sub>DS(on)) is exceptionally low, typically just 0.165 Ω, which contributes to its high efficiency by minimizing conduction losses.
  • Fast Recovery Diode: This MOSFET includes an integrated fast recovery diode which is optimized for high-speed switching applications, reducing losses during the diode recovery phase.
  • Enhanced Switching Performance: The low gate charge (Q<sub>g) and reduced capacitance of the device facilitate faster switching speeds, which is crucial for improving overall system performance.
  • Robustness: The STGD20N45LZAG is designed to endure harsh conditions and provides high dv/dt capability, ensuring stability and long-term reliability.

Applications

The versatility of the STGD20N45LZAG allows it to be used in a variety of power conversion systems. Its robust design and efficient performance make it particularly well-suited for:

  • Switch-mode power supplies (SMPS)
  • LED lighting applications
  • DC-DC converters
  • Welding equipment
  • Power factor correction circuits
  • High-performance power management modules

With its combination of high-voltage capability, low on-resistance, and fast switching performance, the STGD20N45LZAG from STMicroelectronics is a top choice for designers looking to improve efficiency and reliability in their power conversion and management applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.8768 $65.6880
80+ $1.5400 $123.2000
120+ $1.4918 $179.0160
160+ $1.4438 $231.0080
210+ $1.3956 $293.0760
280+ $1.2513 $350.3640
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Availability: 6,564 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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