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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr STMicroelectronics
Package Tape & Reel
Product Status Last Time Buy
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 60 A
Current - Collector Pulsed (Icm) 120 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 30A
Power - Max 260 W
Switching Energy 383µJ (on), 293µJ (off)
Input Type Standard
Gate Charge 149 nC
Td (on/off) @ 25°C 37ns/146ns
Test Condition 400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr) 53 ns
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK (TO-263)
Base Product Number STGB30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 497-16518-1,497-16518-2,497-16518-6
Standard Package 1,000
Win Source Part Number 1174056-STGB30H60DFB
Ultra Librarian 3D Model Ultra Librarian STGB30H60DFB CAD Model

Description

STMicroelectronics STGB30H60DFB IGBT

The STGB30H60DFB is a high-performance insulated gate bipolar transistor (IGBT) manufactured by STMicroelectronics, a global leader in semiconductor solutions. This IGBT is designed to meet the demanding needs of modern power electronic applications, offering a combination of low on-state voltage drop and high-speed switching characteristics.

Featuring a robust and energy-efficient design, the STGB30H60DFB is capable of handling continuous collector currents up to 60A with a collector-emitter voltage of 600V, making it an excellent choice for a wide range of applications, including motor drives, uninterruptible power supplies (UPS), solar inverters, and welding equipment.

The device utilizes STMicroelectronics' advanced trench gate field-stop technology, which provides enhanced performance in terms of efficiency and reliability. This technology allows the STGB30H60DFB to operate at high junction temperatures, offering a maximum operating temperature of 175°C, thus ensuring stability and longevity even under harsh conditions.

Additionally, the STGB30H60DFB features a co-packaged fast recovery diode. This integrated diode is optimized for the high-speed switching of the IGBT, reducing recovery times and energy losses during the switching process. The result is improved overall efficiency and thermal performance, crucial for power electronic systems where energy conservation and heat management are vital.

With its low gate charge and minimized internal capacitances, the STGB30H60DFB provides excellent switching performance, which translates to reduced electromagnetic interference (EMI) and smoother operation in sensitive electronic circuits. This characteristic is particularly important in applications that demand high precision and minimal noise, such as high-frequency power converters.

The STGB30H60DFB is housed in a TO-263 (D2PAK) package, offering a compact footprint and easy mounting on a printed circuit board (PCB). Its package is designed to facilitate efficient heat dissipation, ensuring the IGBT operates within its thermal limits, thereby enhancing the overall durability and performance of the device.

In summary, the STGB30H60DFB from STMicroelectronics is a state-of-the-art IGBT that provides designers with a reliable, high-performance solution for their power management and conversion needs.

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