STB130N6F7 - STMicroelectronics N-Channel MOSFET

The STB130N6F7 is a high-performance N-channel Power MOSFET from STMicroelectronics, a global semiconductor leader known for its innovative products and solutions. This MOSFET is part of the STripFET™ F7 series, which is renowned for its low on-resistance and low gate charge, making it highly efficient for a wide range of applications.

Key Features

• Low On-Resistance: The STB130N6F7 features an extremely low on-state resistance (R_DS(on)), which enhances its efficiency in conducting electrical current.
• High Current Capability: With a continuous drain current (I_D) of up to 80 A, this MOSFET can handle high current loads, making it suitable for demanding power applications.
• High Switching Performance: The fast switching speed of the STB130N6F7 minimizes energy loss during power conversion processes, contributing to overall system efficiency.
• 100% Avalanche Tested: Ensuring reliability in harsh environments, this MOSFET is guaranteed to withstand high energy pulses in avalanche and commutation modes.
• Low Gate Charge (Q_g): A low gate charge allows for faster switching speeds and reduces the power required to drive the MOSFET, improving system power density.

Applications

The STB130N6F7 is designed for a variety of applications, including:

• Switching regulators
• DC/DC converters
• Motor control
• Power management solutions
• Automotive applications and more

Quality and Environmental Compliance

STMicroelectronics is committed to providing environmentally friendly products. The STB130N6F7 is compliant with various international standards, including RoHS and Halogen-free requirements, ensuring minimal environmental impact and safety for end-users.

With its robust design and advanced technology, the STB130N6F7 from STMicroelectronics is an excellent choice for designers looking to optimize their power systems with high efficiency, reliability, and performance.