STMicroelectronics M24C64-FMB6TG EEPROM
The M24C64-FMB6TG is a 64-Kbit serial EEPROM (Electrically Erasable Programmable Read-Only Memory) product from STMicroelectronics, designed for flexible, non-volatile storage solutions in a wide array of electronic applications. This particular EEPROM device utilizes the I²C communication protocol, making it an ideal component for sophisticated embedded systems that require a reliable and efficient method to store and retrieve data.
Key Features:
- Memory Size: 64 Kbits of storage capacity, which is organized as 8K x 8 bits, enabling significant data storage for user-specific applications.
- Interface: Two-wire I²C serial interface support, ensuring straightforward integration into existing bus systems and facilitating easy communication with microcontrollers and other digital devices.
- Speed: Fast write speed and a wide clock frequency range up to 400 kHz, providing swift data handling capabilities for performance-oriented applications.
- Voltage Range: Versatile power supply voltage range from 2.5V to 5.5V, allowing for compatibility with various logic levels and system power supplies.
- Write Cycle Time: Byte or page write in 5 ms max, enabling quick updates to stored data without significant delay.
- Endurance: High reliability with 1 million write cycles and over 40-year data retention, ensuring long-term data integrity and device functionality.
- Temperature Range: Industrial temperature range from -40°C to +85°C, making it suitable for use in harsh environmental conditions.
- Packaging: Delivered in an 8-pin UFDFPN package, which offers a compact footprint for space-constrained applications.
Applications:
The M24C64-FMB6TG EEPROM is versatile and can be used in a variety of applications including:
- Industrial and medical equipment
- Consumer electronics
- Automotive systems
- Personal devices
- Data storage systems
With its robust design and extensive feature set, the M24C64-FMB6TG from STMicroelectronics represents a reliable choice for designers and engineers looking to implement non-volatile memory storage in their electronic designs.