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Same model may have multiple batches, images only for reference.
RJK6026DPP-E0#T2 Renesas Electronics America
Same model may have multiple batches, images only for reference.

RJK6026DPP-E0#T2

Part No RJK6026DPP-E0#T2
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 5A TO220FP / N-Channel 600 V 5A (Ta) 28.5W (Tc) Through Hole TO-220FP
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Renesas Electronics America Inc
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 5A (Ta)
Rds On (Max) @ Id, Vgs 2.4Ohm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 440 pF @ 25 V
Power Dissipation (Max) 28.5W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220FP
Package / Case TO-220-3 Full Pack
ECCN EAR99
HTSUS 8541.29.0095
Other Names 2156-RJK6026DPP-E0#T2-RE,RENRNSRJK6026DPP-E0#T2
Standard Package 1
Win Source Part Number 1173391-RJK6026DPP-E0#T2
Ultra Librarian 3D Model Ultra Librarian RJK6026DPP-E0#T2 CAD Model

Description

The Renesas Electronics America RJK6026DPP-E0#T2 is a discrete semiconductor product that is designed for transistors, FETs, and MOSFETs.

  • Power Dissipation: 28.5W
  • Temperature Range: 150°C
  • Mounting Type: Through-Hole
  • Package/Case: TO-220-3 Full Pack
  • Win Source Part Number: 1173391

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