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FQI47P06TU

Part No FQI47P06TU
Manufacturer ON Semiconductor
Catalog FETs - Single
Description MOSFET P-CH 60V 47A I2PAK
Sample
Rohs State rohs
ECAD Module
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Manufacturer ON Semiconductor
Packaging Tube
Part Status Obsolete (End Of Life)
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) at 25°C 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 26mOhm at 23.5A, 10V
Vgs(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 110nC at 10V
Maximum Vgs ±25V
Input Capacitance (Ciss) (Maximum) at Vds 3600pF at 25V
Power Dissipation (Maximum) 3.75W , 160W (Tc)
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package I2PAK (TO-262)
Manufacturer Package TO-262-3 Long Leads, I2Pak, TO-262AA
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Popularity High
Supply and Demand Status Balance
Win Source Part Number 802701-FQI47P06TU
Ultra Librarian 3D Model Ultra Librarian FQI47P06TU CAD Model

Description

The ON Semiconductor FQI47P06TU is a high-performance P-Channel QFET® MOSFET that offers designers a superb combination of low on-resistance and high switching speeds, making it an ideal choice for a variety of power management and switching applications. This MOSFET is part of ON Semiconductor's renowned FET portfolio, which is recognized for reliability and efficiency.

Key Features

  • Voltage Rating: The FQI47P06TU operates at -60V, providing a robust breakdown voltage for high-side switch applications in negative supply environments.
  • Current Capacity: With a continuous drain current of -47A, this MOSFET can handle significant power for a wide range of operations.
  • Low RDS(on): It boasts a low on-state resistance of 0.022 Ohm, minimizing power losses and improving efficiency in circuits.
  • High-Speed Switching: Designed for fast switching applications, the FQI47P06TU can switch on and off rapidly, which is crucial for power regulators, DC-DC converters, and motor control circuits.
  • Thermal Management: The device comes in a TO-262 package, which provides excellent thermal characteristics, ensuring reliability even under high-power operation.
  • Gate Charge: It has a low total gate charge (Qg), which reduces the energy required to turn the MOSFET on and off, leading to further efficiency gains.

Applications

The versatility of the FQI47P06TU P-Channel MOSFET allows it to be used in a variety of applications, including:

  • Power supply circuits
  • DC/DC converters
  • Motor drives and controllers
  • Load switch circuits
  • Battery management systems
  • Automotive and industrial applications

Quality and Environmental Compliance

ON Semiconductor is committed to providing products that meet the highest standards of quality and environmental compliance. The FQI47P06TU is RoHS compliant and is manufactured with the environment in mind, ensuring that it adheres to global environmental regulations.

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