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FFSH10120ADN-F155

Part No FFSH10120ADN-F155
Manufacturer ON Semiconductor
Catalog Diodes, Rectifiers - Arrays
Description SIC 1200V DIODE / Diode Array 1 Pair Common Cathode 1200 V 10A (DC) Through Hole TO-247-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Diodes - Rectifiers - Diode Arrays
Mfr ON Semiconductor
Package Tube
Product Status Active
Diode Configuration 1 Pair Common Cathode
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V
Current - Average Rectified (Io) (per Diode) 10A (DC)
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Operating Temperature - Junction 175°C (Max)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247-3
Base Product Number FFSH10120
Standard Package 30 pcs
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Win Source Part Number 1324038-FFSH10120ADN-F155
Ultra Librarian 3D Model Ultra Librarian FFSH10120ADN-F155 CAD Model

Description

ON Semiconductor FFSH10120ADN-F155 SiC Schottky Diode

The ON Semiconductor FFSH10120ADN-F155 is a cutting-edge Silicon Carbide (SiC) Schottky diode designed to deliver superior performance in high-frequency power electronics systems. This diode is a perfect choice for applications requiring high efficiency, reliability, and thermal performance. The FFSH10120ADN-F155 is part of ON Semiconductor's extensive portfolio of energy-efficient devices, reflecting the company's commitment to innovation in power management technology.

With a 1200V rating, the FFSH10120ADN-F155 is equipped to handle high voltage operations, making it an ideal component for power supplies, inverters, and motor drives where power efficiency is critical. The SiC material provides a significant advantage over traditional silicon diodes by offering lower power losses and reduced cooling requirements. This results in a more compact and cost-effective design for power converters and other high-voltage applications.

The FFSH10120ADN-F155 boasts a no reverse recovery charge (Qrr) characteristic, which is a standout feature of SiC Schottky diodes. This characteristic minimizes switching losses and improves overall system efficiency, especially in high-frequency operations. Furthermore, the diode's low forward voltage drop contributes to reduced conduction losses, enhancing the performance of the power circuit.

Constructed with ON Semiconductor's advanced technology, the FFSH10120ADN-F155 is designed to withstand high surge currents and offers excellent thermal conductivity. Its robust package ensures long-term reliability and durability, even in harsh environments. The diode also features a low leakage current, which further improves its efficiency and reduces energy waste.

The FFSH10120ADN-F155 is a testament to ON Semiconductor's dedication to providing high-performance components that meet the evolving needs of modern power electronics. With its superior characteristics and proven reliability, this SiC Schottky diode is an excellent choice for designers looking to enhance the efficiency and longevity of their systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $8.1394 $65.1152
18+ $6.6786 $120.2148
27+ $6.4698 $174.6846
37+ $6.2612 $231.6644
48+ $6.0524 $290.5152
64+ $5.4263 $347.2832
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Availability: 3,604 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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