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AFSC5G26D37T2

Part No AFSC5G26D37T2
Manufacturer NXP / Nexperia
Catalog RF Amplifiers
Description IC AMP 5G 2.496-2.69GHZ 26HLQFN / RF Amplifier IC 5G, LTE 2.496GHz ~ 2.69GHz 26-HLQFN (10x6)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category RF and Wireless - RF Amplifiers
Mfr NXP USA Inc.
Series -
Package Tape & Reel
Product Status Active
Frequency 2.496GHz ~ 2.69GHz
P1dB -
Gain 28.3dB
Noise Figure -
RF Type 5G, LTE
Voltage - Supply 0V ~ 32V
Current - Supply -
Test Frequency -
Mounting Type Surface Mount
Package / Case 26-LQFN Exposed Pad
Supplier Device Package 26-HLQFN (10x6)
Base Product Number AFSC5
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.33.0001
Win Source Part Number 1352484-AFSC5G26D37T2
Ultra Librarian 3D Model Ultra Librarian AFSC5G26D37T2 CAD Model

Description

Introducing the AFSC5G26D37T2 from NXP Semiconductors

The AFSC5G26D37T2 is a cutting-edge RF power LDMOS transistor designed by NXP Semiconductors, a leader in the industry. This high-performance product is specifically engineered for cellular base station applications, catering to the growing demand for reliable and efficient 5G networks. With its advanced technology, the AFSC5G26D37T2 is an ideal choice for RF energy applications, including but not limited to, 5G Massive MIMO and active antenna systems.

Constructed with NXP's innovative LDMOS technology, the AFSC5G26D37T2 offers exceptional performance across a broad frequency range. It is optimized for 5G NR (New Radio) bands, ensuring compatibility with the latest communication standards. The device features high gain, high efficiency, and a wide bandwidth, making it a versatile solution for various high-frequency applications.

The robust design of the AFSC5G26D37T2 ensures that it can withstand the harsh conditions of outdoor cellular infrastructure. It is housed in a compact and rugged package, which provides excellent thermal stability and longevity. This transistor is capable of delivering an outstanding output power level, which translates to improved coverage and capacity for cellular networks.

Key features of the AFSC5G26D37T2 include:

  • High efficiency, which leads to lower energy consumption and cost savings for network operators.
  • Advanced LDMOS technology that ensures high gain and wide bandwidth for superior RF performance.
  • Optimization for 5G NR applications, making it future-proof for the next generation of cellular networks.
  • Excellent thermal performance for reliability in various environmental conditions.
  • Integration-friendly design, allowing for seamless incorporation into existing and new RF systems.

NXP's commitment to innovation is evident in the AFSC5G26D37T2, which is designed to meet the stringent requirements of modern wireless communication systems. Whether for expanding current network infrastructure or deploying new 5G services, this product stands out as a high-quality, reliable component that can help accelerate the global transition to 5G connectivity.

For communication system designers and network operators seeking to enhance their systems with superior RF capabilities, the AFSC5G26D37T2 from NXP Semiconductors is an excellent choice that promises performance, efficiency, and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $34.9207 $69.8414
5+ $28.6528 $143.2640
7+ $27.7574 $194.3018
9+ $26.8620 $241.7580
12+ $25.9666 $311.5992
15+ $23.2804 $349.2060
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Availability: 5,700 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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