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2PD601BRL

Part No 2PD601BRL
Manufacturer NXP / Nexperia
Catalog Hard To Find
Description 50 V, 200 mA NPN general-purpose transistors
Sample
Rohs State rohs
ECAD Module
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Manufacturer NXP
Win Source Part Number 1124322-2PD601BRL
Manufacturer Homepage www.nxp.com
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian 2PD601BRL CAD Model

Description

The NXP 2PD601BRL is a state-of-the-art Bipolar Low VCEsat (Very Low Collector-Emitter Saturation Voltage) Transistor that stands out in the market for its high efficiency and current handling capabilities. This innovative Breakthrough In Small Signal (BISS) transistor is designed to meet the requirements of today's high-performance switching applications and is particularly well-suited for portable devices due to its low power consumption.

Key Features

  • Low VCEsat: The transistor has a very low collector-emitter saturation voltage, which results in reduced power loss and improved overall efficiency during operation.
  • High Collector Current: With the ability to handle a substantial collector current, the 2PD601BRL is ideal for demanding applications that require a robust current flow.
  • Surface-Mounted Device (SMD): The package is designed for surface mounting, which saves valuable space on the PCB and simplifies the manufacturing process.
  • High-Speed Switching: The device is optimized for high-speed switching, making it suitable for applications where fast turn-on and turn-off times are critical.
  • Low Power Consumption: Its efficient design ensures minimal power consumption, which is essential for battery-operated devices.

Applications

The NXP 2PD601BRL transistor is versatile and can be used in a wide range of applications. It is particularly effective in:

  • Switching regulators
  • DC-DC converters
  • Power management circuits
  • Load switches
  • Motor control circuits
  • Portable devices

Product Specifications

The 2PD601BRL comes with a set of specifications that make it suitable for high-performance applications:

  • Package: SOT23 (TO-236AB)
  • Configuration: Single
  • Collector-Emitter Voltage VCEO Max: 50 V
  • Collector-Base Voltage VCBO: 50 V
  • Emitter-Base Voltage VEBO: 5 V
  • Continuous Collector Current Ic Max: 1 A
  • Power Dissipation Pd: 1.25 W
  • DC Current Gain hFE: 100 to 600

With its combination of low VCEsat, high current capability, and fast switching performance, the NXP 2PD601BRL is an excellent choice for designers looking to optimize their power-sensitive applications.

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