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2N2608

Part No 2N2608
Manufacturer Microchip Technology
Catalog JFETs (Junction Field Effect)
Description JFET P-CH 30V TO18 / JFET P-Channel 30 V 300 mW Through Hole TO-18 (TO-206AA)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - JFETs
Mfr Microchip Technology
Package Bulk
Product Status Active
FET Type P-Channel
Voltage - Breakdown (V(BR)GSS) 30 V
Current - Drain (Idss) @ Vds (Vgs=0) 1 mA @ 5 V
Voltage - Cutoff (VGS off) @ Id 750 mV @ 1 µA
Input Capacitance (Ciss) (Max) @ Vds 10pF @ 5V
Power - Max 300 mW
Temperature Range - Operating -65°C ~ 200°C (TJ)
Mounting Type Through Hole
Package / Case TO-206AA, TO-18-3 Metal Can
Supplier Device Package TO-18 (TO-206AA)
Standard Package 1 pcs
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 10072-2N2608
Ultra Librarian 3D Model Ultra Librarian 2N2608 CAD Model

Description

The 2N2608 is a high-performance, NPN bipolar junction transistor (BJT) from Microchip Technology, a leading provider of smart, connected, and secure embedded control solutions. This semiconductor device is designed for general-purpose amplification and switching applications and is well-suited for a wide range of electronic circuits.

Key Features:

  • Versatile Application: The 2N2608 transistor can be used in various applications, including audio amplifiers, signal processing, power regulators, and other general-purpose electronic circuits.
  • High-Speed Switching: Engineered for fast switching capabilities, this transistor is ideal for high-speed and high-frequency operations.
  • Low Saturation Voltage: It offers low collector-emitter saturation voltage, which enhances its efficiency in switching applications and reduces power loss.
  • Durable: The 2N2608 is encapsulated in a robust package that ensures its durability and long-term reliability in challenging environments.
  • TO-18 Metal Can Package: The classic TO-18 metal can package provides a compact footprint and excellent thermal performance, making it suitable for space-constrained applications.

Specifications:

Parameter Value Transistor Polarity NPN Collector-Emitter Voltage (Vceo) Check Datasheet Collector-Base Voltage (Vcbo) Check Datasheet Emitter-Base Voltage (Vebo) Check Datasheet Collector Current - Continuous (Ic) Check Datasheet Power Dissipation (Pd) Check Datasheet DC Current Gain (hFE) Check Datasheet

For detailed electrical characteristics and operational limits, it is essential to refer to the official datasheet provided by Microchip Technology. The datasheet will offer comprehensive information, including maximum ratings, thermal properties, and guidance for safe and effective usage.

Whether you're designing consumer electronics, industrial control systems, or experimenting with hobbyist projects, the Microchip Technology 2N2608 transistor is a reliable and versatile component that can enhance the performance of your electronic designs.

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