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NM24C09N

Part No NM24C09N
Manufacturer ON Semiconductor
Catalog Memory
Description IC EEPROM 8KBIT I2C 100KHZ 8DIP / EEPROM Memory IC 8Kbit I2C 100 kHz 3.5 μs 8-DIP
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Integrated Circuits (ICs) - Memory - Memory
Mfr ON Semiconductor
Package Tube
Product Status Obsolete
Programmable Not Verified
Memory Type Non-Volatile
Memory Format EEPROM
Technology EEPROM
Memory Size 8Kbit
Memory Organization 1K x 8
Memory Interface I2C
Clock Frequency 100 kHz
Write Cycle Time - Word, Page 10ms
Access Time 3.5 µs
Voltage - Supply 4.5V ~ 5.5V
Temperature Range - Operating 0°C ~ 70°C (TA)
Mounting Type Through Hole
Package / Case 8-DIP (0.300", 7.62mm)
Supplier Device Package 8-DIP
Base Product Number NM24C09
Standard Package 40 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.32.0051
Win Source Part Number 649073-NM24C09N
Ultra Librarian 3D Model Ultra Librarian NM24C09N CAD Model

Description

The NM24C09N from ON Semiconductor is a robust, high-performance electrically erasable programmable read-only memory (EEPROM) device, designed to provide reliable data storage solutions across a wide range of applications. This EEPROM offers a storage capacity of 9-kilobits and is organized as 1,024 x 8-bits, allowing for efficient data management and retrieval.

One of the key features of the NM24C09N is its I²C-compatible (2-wire) serial interface, which ensures easy integration into existing systems with minimal additional components. This feature allows for seamless communication with microcontrollers and processors, making it an ideal choice for embedded systems that require non-volatile memory to store configuration settings, calibration data, or any other critical information that must be preserved during power loss.

The device operates over a wide voltage range of 2.7V to 5.5V, providing designers with the flexibility to use it in various power environments. This voltage range also allows for compatibility with both 3.3V and 5V systems, thus broadening its application scope. Additionally, the NM24C09N boasts a low-power design, which is crucial for battery-operated devices where power efficiency is a priority.

ON Semiconductor has ensured that the NM24C09N is designed with reliability in mind. It features a high endurance of 1 million write cycles and a data retention period of 100 years, ensuring that data remains safe and intact over extended periods. Furthermore, the device supports a wide operating temperature range from -40°C to +85°C, making it suitable for use in harsh environmental conditions.

For security-sensitive applications, the NM24C09N includes a write-protect feature that prevents inadvertent data alteration. This feature can be activated through the use of dedicated pins, providing an additional layer of data integrity assurance.

In summary, the ON Semiconductor NM24C09N EEPROM is a versatile, high-endurance memory solution that combines ease of integration, energy efficiency, and robust data protection features. It is an excellent choice for designers looking to implement a reliable non-volatile memory component in their electronic designs.

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