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DS1250AB-100

Part No DS1250AB-100
Manufacturer Maxim Integrated
Catalog Memory
Description IC NVSRAM 4MBIT PARALLEL 32EDIP / NVSRAM (Non-Volatile SRAM) Memory IC 4Mbit Parallel 100 ns 32-EDIP
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Integrated Circuits (ICs)>Memory>Memory
Mfr Maxim Integrated
Series -
Package Tube
Product Status Obsolete
Memory Type Non-Volatile
Memory Format NVSRAM
Technology NVSRAM (Non-Volatile SRAM)
Memory Size 4Mbit
Memory Organization 512K x 8
Memory Interface Parallel
Write Cycle Time - Word, Page 100ns
Access Time 100 ns
Voltage - Supply 4.75V ~ 5.25V
Temperature Range - Operating 0°C ~ 70°C (TA)
Mounting Type Through Hole
Package / Case 32-DIP Module (0.600", 15.24mm)
Supplier Device Package 32-EDIP
Base Product Number DS1250AB
RoHS Status RoHS non-compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN 3A991B2A
HTSUS 8542.32.0041
Standard Package 11 pcs
Win Source Part Number 1381937-DS1250AB-100
Ultra Librarian 3D Model Ultra Librarian DS1250AB-100 CAD Model

Description

The DS1250AB-100 is a 4096k Nonvolatile SRAM designed by Maxim Integrated, offering a robust storage solution for systems requiring memory backup in the event of power failure. This high-capacity memory module utilizes an internal lithium energy source to maintain data integrity and retain memory contents when external power is lost, making it an ideal choice for critical data storage applications.

Key Features

  • High Storage Capacity: With a 4-Megabit (4096k x 8) memory array, the DS1250AB-100 provides ample space for data storage, making it suitable for complex applications with substantial data retention needs.
  • Long Data Retention: The internal lithium battery can maintain data for over 10 years, ensuring long-term reliability of stored information.
  • Fast Access Time: The module offers a fast read/write access time of 100 ns, enabling quick data retrieval and storage, which is crucial for high-performance computing environments.
  • Automatic Battery Backup: The smart circuitry automatically switches to the battery supply when a power failure is detected, providing seamless transition and data preservation.
  • Write Protection: An optional write protect feature guards against inadvertent data alteration during power transitions.

Applications

The DS1250AB-100 is versatile and can be employed in a variety of applications where data integrity is paramount. It is particularly useful in:

  • Industrial control systems
  • RAID systems
  • Utility meters
  • Medical equipment
  • POS terminals

Technical Specifications

Parameter Value Memory Capacity 4 Mbit (4096k x 8) Access Time 100 ns Battery Internal lithium Data Retention Over 10 years Package 32-Pin EDIP or 32-Pin TSOP

With its combination of reliability, capacity, and speed, the Maxim Integrated DS1250AB-100 Nonvolatile SRAM is a top-tier memory solution for applications demanding consistent performance and nonvolatile data security.

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