IXGH17N100A Real Image
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Not For New Designs
VCEO Maximum Collector-Emitter Breakdown Voltage 1000V
Maximum Current Collector 34A
Pulsed Collector Current 68A
Collector-emitter saturation voltage(Max) 4V @ 15V, 17A
Maximum Power Dissipation 150W
Total Switching Energy(Ets) 3mJ (off)
Input Type Standard
Gate Charge 100nC
Turn-on and Turn-off delay time 100ns/500ns
Testing Conditions 800V, 17A, 82 Ohm, 15V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXGH)
Win Source Part Number 1049566-IXGH17N100A
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXGH17N100A CAD Model

Description

The IXYS IGBT type transistor is a high-performance transistor designed for use in various electronic applications.

  • Maximum Current Collector: 34A
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 1000V
  • Maximum Power Dissipation: 150W
  • Pulsed Collector Current: 68A
  • Collector-Emitter Saturation Voltage: 4V @ 15V, 17A
  • Total Switching Energy (off): 3mJ
  • Turn-On Delay Time: 100ns
  • Turn-Off Delay Time: 500ns
  • Package: TO-247AD
  • Mounting Type: Through Hole

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