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NGTB75N60FL2WG

Part No NGTB75N60FL2WG
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description IGBT
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 100A
Current - Collector Pulsed (Icm) 200A
Vce(on) (Maximum) @ Vge, Ic 2V @ 15V, 75A
Power - Max 595W
Switching Energy 1.5mJ (on), 1mJ (off)
Input Type Standard
Gate Charge 310nC
Td (on/off) @ 25°C 110ns/270ns
Test Condition 400V, 75A, 10 Ohm, 15V
Reverse Recovery Time (trr) 80ns
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Package TO-247-3
Manufacturer Package TO-247
Win Source Part Number 1231164-NGTB75N60FL2WG
Manufacturer Homepage www.onsemi.com
Family Name NGTB75N60FL2WG
ECCN EAR99
Country of Origin China, Czech Republic, Japan, Vietnam
Halogen Free Compliant
Estimated EOL Date Obsolete
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NGTB75N60FL2WG CAD Model

Description

The NGTB75N60FL2WG is a state-of-the-art IGBT (Insulated Gate Bipolar Transistor) designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This IGBT is specifically engineered to deliver high-efficiency and high-speed switching performance, making it an ideal choice for a wide range of power applications.

Key Features

  • High Current Capability: The device is rated for a continuous collector current of 75A, ensuring robust performance in high-power applications.
  • Low On-Resistance: It boasts a low on-state voltage drop due to an on-resistance of typically just 0.047 ohms, which translates to reduced conduction losses and improved overall efficiency.
  • High Switching Speed: With a fast switching speed, the NGTB75N60FL2WG IGBT minimizes switching losses and is suitable for high-frequency operations.
  • Co-Packaged Free Wheeling Diode: The inclusion of a co-packaged soft recovery anti-parallel diode ensures efficient switching and protection against reverse current, enhancing the reliability of the power circuit.
  • High Temperature Operation: The device is designed to operate reliably at junction temperatures up to 175°C, making it suitable for demanding thermal environments.

Applications

The versatility of the NGTB75N60FL2WG IGBT allows it to be used in a multitude of applications, including but not limited to:

  • Uninterruptible Power Supplies (UPS)
  • Motor Drives
  • Power Inverters
  • Induction Heating
  • Solar Inverters
  • Welding Equipment

Quality and Reliability

Built with ON Semiconductor's commitment to quality, the NGTB75N60FL2WG IGBT is manufactured in ISO/TS16949, ISO9001, and ISO14001 certified facilities. It complies with the RoHS directive, ensuring that it meets the latest environmental standards and is free from hazardous substances.

Technical Specifications

Parameter Value Collector-Emitter Voltage (V<sub>ces) 600V Continuous Collector Current (I<sub>c) 75A Power Dissipation (P<sub>d) 357W Operating Junction Temperature (T<sub>j) -55°C to +175°C

For those seeking a reliable and efficient solution for their power switching needs, the NGTB75N60FL2WG IGBT from ON Semiconductor provides an excellent balance of performance, durability, and energy efficiency.

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $7.1772 $64.5948
20+ $5.8893 $117.7860
31+ $5.7057 $176.8767
42+ $5.5209 $231.8778
55+ $5.3373 $293.5515
73+ $4.7852 $349.3196
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Availability: 2,310 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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