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Same model may have multiple batches, images only for reference.
IXFP22N65X2M Real Image
Same model may have multiple batches, images only for reference.

IXFP22N65X2M

Part No IXFP22N65X2M
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 22A TO220 / N-Channel 650 V 22A (Tc) 37W (Tc) Through Hole TO-220 Isolated Tab
Datasheet
IXFP22N65X2M Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr IXYS
Series HiPerFET™, Ultra X2
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 145mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs 37 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2190 pF @ 25 V
Power Dissipation (Max) 37W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220 Isolated Tab
Package / Case TO-220-3 Full Pack, Isolated Tab
Base Product Number IXFP22
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
Win Source Part Number 1007025-IXFP22N65X2M
Ultra Librarian 3D Model Ultra Librarian IXFP22N65X2M CAD Model

Description

The IXFP22N65X2M is an N-channel MOSFET transistor of the HiPerFET™, Ultra X2 series manufactured by IXYS. It has a drain to source voltage of 650V and a continuous drain current of 22A (Tc).

  • Transistor Type: N-Channel MOSFET
  • Series: HiPerFET™, Ultra X2
  • Drain to Source Voltage: 650V
  • Continuous Drain Current: 22A (Tc)
  • Mounting Type: Through Hole
  • Package/Case: TO-220-3 Full Pack, Isolated Tab
  • Operating Temperature: -55°C ~ 150°C (TJ)

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