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IXFB72N55Q2

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Part No	IXFB72N55Q2
Manufacturer	IXYS
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 550V 72A PLUS264 / N-Channel 550 V 72A (Tc) 890W (Tc) Through Hole PLUS264™
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	IXYS
Series	HiPerFET™, Q2 Class
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	550 V
Current - Continuous Drain (Id) @ 25°C	72A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	72mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id	5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs	258 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	10500 pF @ 25 V
Power Dissipation (Max)	890W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PLUS264™
Package / Case	TO-264-3, TO-264AA
Base Product Number	IXFB72
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	25
Win Source Part Number	973787-IXFB72N55Q2
Ultra Librarian 3D Model	Ultra Librarian IXFB72N55Q2 CAD Model

Alternative Products

Description

The IXFB72N55Q2 is a HiPerFET™ Q2 Class N-Channel MOSFET transistor from IXYS that is specifically designed for discrete semiconductor products such as transistors, FETs, MOSFETs, and single devices.

Package: Tube
Standard Package: 25
MOSFET Technology: Yes
Drain to Source Voltage (Vdss): 550 V
Continuous Drain Current (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
Operating Temperature Range: -55°C to 150°C (TJ)

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