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IXFB100N50Q3

Name: IXFB100N50Q3
Brand: IXYS
SKU: 1193723
Availability: InStock
Rating: 4.84 (5 reviews)

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Part No	IXFB100N50Q3
Manufacturer	IXYS
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 500V 100A PLUS264 / N-Channel 500 V 100A (Tc) 1560W (Tc) Through Hole PLUS264™
Datasheet	IXFB100N50Q3 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	IXYS
Series	HiPerFET™, Q3 Class
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500 V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	49mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	6.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs	255 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	13800 pF @ 25 V
Power Dissipation (Max)	1560W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PLUS264™
Package / Case	TO-264-3, TO-264AA
Base Product Number	IXFB100
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	-IXFB100N50Q3
Standard Package	25
Win Source Part Number	1193723-IXFB100N50Q3
Ultra Librarian 3D Model	Ultra Librarian IXFB100N50Q3 CAD Model

Description

The IXFB100N50Q3 is a HiPerFET™ Q3 Class N-channel MOSFET transistor with a drain to source voltage (Vdss) of 500 V and a continuous drain current (Id) of 100A (Tc) @ 25°C.

Maximum Rds On: 49mOhm @ 50A and 10V
Gate Charge (Qg): 255 nC @ 10V
Input Capacitance (Ciss): 13800 pF @ 25V
Package: TO-264-3/TO-264AA
Supplier Device Package: PLUS264™
Mounting Type: Through-Hole
Operating Temperature Range: -55°C to 150°C (TJ)

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