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Same model may have multiple batches, images only for reference.
IXBF9N160G IXYS
Same model may have multiple batches, images only for reference.

IXBF9N160G

Part No IXBF9N160G
Manufacturer IXYS
Catalog IGBTs - Arrays
Description IGBT 1600V 7A 70W I4PAC
Datasheet
IXBF9N160G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number WS1308587-IXBF9N160G
Category Discrete Semiconductor Products>Transistors >IGBTs Single
Manufacturer IXYS
Packaging  Tube
Part Status Active
Voltage - Collector Emitter Breakdown (Max) 1600 V
Current - Collector (Ic) (Max) 7 A
Vce(on) (Max) @ Vge, Ic 7V @ 15V, 5A
Power - Max 70 W
Input Type Standard
Gate Charge 34 nC
Ultra Librarian 3D Model Ultra Librarian IXBF9N160G CAD Model

Description

  • High Voltage BIMOSFETTM 
    substitute for high voltage MOSFETs with significantly lower voltage drop 
    MOSFET compatible control 10 V turn on gate voltage
    fast switching for high frequency operation
    reverse conduction capability
  • isolated back surface
    enlarged creepage towards heatsink 
    enlarged creepage between high voltage pins
    application friendly pinout 
    high reliability
    industry standard outline

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