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PTMA080304M V1

Part No PTMA080304M V1
Manufacturer Infineon Technologies
Catalog RF Amplifiers
Description Highpwr Rf Ldmos 28V 30W DSO-20
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Number of Pins 20
RoHS Compliant
Win Source Part Number 975457-PTMA080304M V1
Categories RF Amplifiers
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian PTMA080304M V1 CAD Model

Description

The PTMA080304M V1 is an LDMOS power transistor manufactured by Infineon Technologies. It is designed for high-power amplifier applications in the VHF and UHF frequency ranges. This transistor is commonly used in broadcast transmitters, industrial heating systems, and other high-power RF applications. Infineon Technologies is a leading provider of semiconductor solutions, and the PTMA080304M V1 exemplifies their expertise in RF power transistors.

Applications

  • Broadcast Transmitters: Used in VHF and UHF broadcast transmitters.
  • Industrial Heating: Powers RF generators for industrial heating applications.
  • Medical Equipment: Used in RF amplifiers for medical imaging and therapy.
  • Scientific Research: Powers RF amplifiers for scientific research applications.
  • Radar Systems: Amplifies RF signals in radar systems.

Features

  • LDMOS Technology: Provides high power gain and efficiency.
  • High Output Power: Delivers high output power in the VHF and UHF frequency ranges.
  • High Gain: Provides high power gain for efficient amplification.
  • Rugged Construction: Designed for reliable operation in harsh environments.
  • Wide Operating Voltage Range: Operates over a wide range of supply voltages.
  • RoHS Compliant: Complies with environmental regulations regarding hazardous substances.

Benefits

  • Efficient Power Amplification: LDMOS technology provides high power gain and efficiency.
  • High Output Power: Delivers the power needed for demanding RF applications.
  • Reliable Performance: Rugged construction ensures long-term reliability.
  • Versatile Application: Suitable for a wide range of high-power RF applications.
  • Cost-Effective: Provides a cost-effective solution for RF power amplification.

Additional Details

The PTMA080304M V1 is an LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor designed for high-power RF applications. It typically operates in the VHF and UHF frequency ranges, delivering high output power with high efficiency. The transistor is designed for reliable operation in harsh environments and features a wide operating voltage range. Infineon's commitment to quality ensures that the PTMA080304M V1 provides consistent and reliable performance in a variety of applications. Proper heat sinking is crucial for maintaining optimal performance and extending the lifespan of the transistor.

This power transistor is commonly used in broadcast transmitters, industrial heating systems, and other high-power RF applications where reliable performance is required.

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