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Same model may have multiple batches, images only for reference.
IRGS4045DPBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRGS4045DPBF

Part No IRGS4045DPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 12A 77W D2PAK
Datasheet
IRGS4045DPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 12A
Pulsed Collector Current 18A
Collector-emitter saturation voltage(Max) 2V @ 15V, 6A
Maximum Power Dissipation 77W
Total Switching Energy(Ets) 56μJ (on), 122μJ (off)
Input Type Standard
Gate Charge 19.5nC
Turn-on and Turn-off delay time 27ns/75ns
Testing Conditions 400V, 6A, 47 Ohm, 15V
Reverse Recovery Time (trr) 74ns
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Win Source Part Number 1047379-IRGS4045DPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRGS4045DPBF CAD Model

Description

The Infineon Technologies IRGS4045DPBF is an obsolete (EOL) IGBT type transistor with a maximum collector-emitter breakdown voltage of 600V and a maximum current collector of 12A.

  • Type: IGBT
  • Status: Obsolete (EOL)
  • Maximum Collector-Emitter Breakdown Voltage: 600V
  • Maximum Current Collector: 12A
  • Collector-Emitter Saturation Voltage: 2V @ 15V and 6A
  • Package: D2PAK
  • Operating Temperature: -55°C to 175°C (TJ)
  • Gate Charge: 19.5nC
  • Reverse Recovery Time (trr): 74ns
  • Total Switching Energy (Ets): 56μJ (on) and 122μJ (off)
  • Application: Converter and DDR applications

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