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Same model may have multiple batches, images only for reference.
IRGP4640D-EPBF Real Image
Same model may have multiple batches, images only for reference.

IRGP4640D-EPBF

Part No IRGP4640D-EPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description INSULATED GATEBIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | IGBT 600V 65A 250W TO247AC
Datasheet
IRGP4640D-EPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 65A
Current - Collector Pulsed (Icm) 72A
Vce(on) (Maximum) at Vge, Ic 1.9V at 15V, 24A
Maximum Power 250W
Switching Energy 115μJ (on), 600μJ (off)
Input Type Standard
Gate Charge 75nC
Td (on/off) at 25°C 41ns/104ns
Test Condition 400V, 24A, 10Ohm, 15V
Reverse Recovery Time (trr) 89ns
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Manufacturer Package TO-247-3
Supplier Device Package TO-247AC
Family Part Number IRGP4640
Manufacturer Pack Quantity 25
MSL Level 1 (Unlimited)
Win Source Part Number 1188372-IRGP4640D-EPBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRGP4640D-EPBF CAD Model

Description

The Infineon Technologies IRGP4640D-EPBF is an IGBT (Insulated Gate Bipolar Transistor).

  • Applications: High power switching applications
  • Maximum Collector Current: 65A
  • Maximum Collector-Emitter Breakdown Voltage: 600V
  • Vce(on): 1.9V @ 15V and 24A
  • Switching Energy: 115μJ (on) and 600μJ (off)
  • Gate Charge: 75nC
  • Package: TO-247AC
  • Operating Temperature Range: -55°C to 175°C
  • Ideal Choice for: Applications that require a high power switching device with a low on-state voltage

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