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Same model may have multiple batches, images only for reference.
IRFH5106TR2PBF Real Image
Same model may have multiple batches, images only for reference.

IRFH5106TR2PBF

Part No IRFH5106TR2PBF
Manufacturer Infineon Technologies
Catalog FETs - Single
Description MOSFET N-CH 60V 100A 5X6 PQFN / HEXFET Power MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Infineon Technologies
Packaging Cut Tape (CT)
Part Status Obsolete (End Of Life)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) at 25°C 21A , 100A (Tc)
Rds On (Maximum) at Id, Vgs 5.6mOhm at 50A, 10V
Vgs(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 75nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds 3090pF at 25V
Mounting Style SMD
Supplier Device Package 8-PQFN (5x6)
Manufacturer Package 8-PowerVDFN
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Popularity Low
Supply and Demand Status Limited
Win Source Part Number 812333-IRFH5106TR2PBF
Ultra Librarian 3D Model Ultra Librarian IRFH5106TR2PBF CAD Model

Description

The Infineon Technologies 812333-IRFH5106TR2PBF is an N-Channel MOSFET transistor with a 8-PQFN (5x6) case/package.

  • Transistor Type: N-Channel MOSFET
  • Case/Package: 8-PQFN (5x6)
  • Drain to Source Voltage (Vdss): 60V
  • Rds On (Maximum) @ Id, Vgs: 5.6mOhm @ 50A, 10V
  • Gate Charge (Qg) (Maximum) @ Vgs: 75nC @ 10V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 3090pF @ 25V
  • Continuous Drain Current @ 25°C: 21A, 100A (Tc)
  • Vgs(th) (Maximum) @ Id: 4V @ 250μA
  • Product Category: Discrete Semiconductor
  • Status: Obsolete (end of life)
  • Popularity: Low
  • Supply and Demand Status: Limited

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