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IPI14N03LA

Part No IPI14N03LA
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 30A TO262-3 / N-Channel 25 V 30A (Tc) 46W (Tc) Through Hole PG-TO262-3
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series OptiMOS™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 13.9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs 8.3 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1043 pF @ 15 V
Power Dissipation (Max) 46W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Base Product Number IPI14N
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP000014029,IPI14N03LAX
Standard Package 500
Win Source Part Number 1185943-IPI14N03LA
Ultra Librarian 3D Model Ultra Librarian IPI14N03LA CAD Model

Description

The IPI14N03LA is a MOSFET transistor that belongs to the OptiMOS™ series of Infineon Technologies.

  • FET Type: N-Channel
  • Drain to Source Voltage (Vdss): 25 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 13.9mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 20μA
  • Power Dissipation: 46W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1043 pF @ 15 V
  • Package: Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
  • Supplier Device Package: PG-TO262-3

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