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Same model may have multiple batches, images only for reference.
BSZ150N10LS3 G Infineon Technologies – Price, Stock & Datasheet
Same model may have multiple batches, images only for reference.

BSZ150N10LS3 G

Part No BSZ150N10LS3 G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description BSZ150N10LS3 G Infineon Technologies MOSFETs N-Ch 100V 40A TSDSON-8 datasheet, inventory, & pricing.
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Infineon
Product Category MOSFETs
RoHS Details
REACH - SVHC Details
Technology Si
Mounting Style SMD/SMT
Package / Case TSDSON-8
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 100 V
Id - Continuous Drain Current 40 A
Rds On - Drain-Source Resistance 15 mOhms
Vgs - Gate-Source Voltage - 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage 1.1 V
Qg - Gate Charge 26 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 63 W
Channel Mode Enhancement
Tradename OptiMOS
Packaging Reel
Brand Infineon Technologies
Configuration Single
Fall Time 3.9 ns
Forward Transconductance - Min 21 S
Product Type MOSFETs
Rise Time 4.6 ns
Series OptiMOS 3
Factory Pack Quantity Factory Pack Quantity 5000
Subcategory Transistors
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 23.4 ns
Typical Turn-On Delay Time 8.1 ns
Part # Aliases SP001002916 BSZ150N10LS3GATMA1
Unit Weight 0.003966 oz
Ultra Librarian 3D Model Ultra Librarian BSZ150N10LS3 G CAD Model

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