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Same model may have multiple batches, images only for reference.
BSO612CV Infineon Technologies
Same model may have multiple batches, images only for reference.

BSO612CV

Part No BSO612CV
Manufacturer Infineon Technologies
Catalog FETs - Arrays
Description MOSFET N/P-CH 60V 3A/2A 8SOIC
Datasheet
BSO612CV Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Infineon Technologies
Series SIPMOS®
Package Tape & Reel (TR)Cut Tape (CT)
Product Status Obsolete
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 3A, 2A
Rds On (Max) @ Id, Vgs 120mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 20µA
Gate Charge (Qg) (Max) @ Vgs 15.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 340pF @ 25V
Power - Max 2W
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package PG-DSO-8
Base Product Number BSO612
Standard Package 2,500 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 572117-BSO612CV
Ultra Librarian 3D Model Ultra Librarian BSO612CV CAD Model

Description

The BSO612CV is a MOSFET transistor array from Infineon Technologies.

  • Series: SIPMOS
  • Category: Discrete Semiconductor Products
  • Vdss: 60V
  • Id (25°C): 3A and 2A
  • Rds On (Max) @ 3A, 10V: 120mOhm
  • Qg @ 10V: 15.5nC
  • Ciss @ 25V: 340pF
  • Power Dissipation: 2W
  • Mounting: Surface Mount
  • Package: 8-SOIC
  • Product Status: Obsolete
  • Operating Temperature: -55°C to 150°C

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Quantity Unit Price Ext. Price
110+ $0.5403 $59.4330
265+ $0.4434 $117.5010
405+ $0.4296 $173.9880
560+ $0.4157 $232.7920
720+ $0.4019 $289.3680
965+ $0.3603 $347.6895
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