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DMPH6250SQ-7

Part No DMPH6250SQ-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 2.4A SOT23 T&R / P-Channel 60 V 2.4A (Ta) 920mW Surface Mount SOT-23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Diodes Incorporated
Series Automotive, AEC-Q101
Package Tape & Reel (TR)
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 2.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 155mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.3 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 512 pF @ 30 V
Power Dissipation (Max) 920mW
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3
Base Product Number DMPH6250
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Standard Package 3,000
Win Source Part Number 1055808-DMPH6250SQ-7
Ultra Librarian 3D Model Ultra Librarian DMPH6250SQ-7 CAD Model

Description

Product Overview: DMPH6250SQ-7

The DMPH6250SQ-7 is a high-performance, dual N-channel enhancement mode field-effect transistor (FET) designed and manufactured by Diodes Incorporated. This MOSFET is engineered using advanced trench technology to provide superior switching performance and high efficiency in a wide range of applications. The DMPH6250SQ-7 is housed in a compact PowerDI®3333-8 package, making it an ideal choice for space-constrained environments.

Key Features

  • Low On-Resistance: The device offers very low on-resistance (RDS(on)), which translates to reduced conduction losses and improved overall efficiency in electronic circuits.
  • High Continuous Drain Current: It supports a high continuous drain current (ID), allowing it to handle significant power levels, making it suitable for high-power applications.
  • High-Speed Switching: The FET is optimized for fast switching speeds, which is essential for reducing switching losses and improving the performance of power conversion systems.
  • Low Threshold Voltage: A low threshold voltage (VGS(th)) ensures that the device can be easily driven at lower gate voltages, enhancing compatibility with low-voltage drive signals.

Applications

The DMPH6250SQ-7 is versatile and can be used in various applications, including:

  • Power Management Systems
  • DC/DC Converters
  • Load Switches
  • Battery Management Circuits
  • Motor Drives
  • Portable Devices

Reliability and Quality

Diodes Incorporated is known for its commitment to quality and reliability, and the DMPH6250SQ-7 is no exception. It meets stringent industry standards, ensuring long-term reliability for critical applications. Additionally, the product is RoHS compliant, reflecting the company's dedication to environmental responsibility.

Conclusion

In summary, the DMPH6250SQ-7 from Diodes Incorporated is a highly efficient, reliable, and versatile dual N-channel MOSFET that offers excellent performance characteristics for a wide range of power applications. Its compact form factor, combined with its impressive electrical specifications, make it a top choice for designers looking to optimize their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
285+ $0.2033 $57.9405
695+ $0.1669 $115.9955
1,075+ $0.1616 $173.7200
1,480+ $0.1564 $231.4720
1,910+ $0.1512 $288.7920
2,560+ $0.1356 $347.1360
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 60,000 pieces
MOQ: 285 pcs
Order Increment : 1 pcs
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