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DMN2022UDH-7

Part No DMN2022UDH-7
Manufacturer Diodes Incorporated
Catalog FETs - Arrays
Description MOSFET BVDSS: 8V 24V V-DFN3030-8 / Mosfet Array
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Diodes Incorporated
Series *
Package Tape & Reel
Product Status Active
Base Product Number DMN2022
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
HTSUS 0000.00.0000
Win Source Part Number 868948-DMN2022UDH-7
Ultra Librarian 3D Model Ultra Librarian DMN2022UDH-7 CAD Model

Description

Introducing the DMN2022UDH-7 MOSFET from Diodes Incorporated

The DMN2022UDH-7 is a high-performance, dual N-channel enhancement mode field-effect transistor (MOSFET) engineered by the renowned semiconductor manufacturer, Diodes Incorporated. This product is designed to meet the rigorous demands of power management applications across a wide range of electronic devices.

With its compact and energy-efficient design, the DMN2022UDH-7 is encapsulated in a space-saving DFN2020-6 (SOT1118) package, which is characterized by its low thermal resistance and minimal footprint on the PCB. This makes it an ideal choice for portable and space-constrained applications where efficiency and power density are critical.

The DMN2022UDH-7 boasts an impressive continuous drain current (ID) of 6.5A at 25°C, ensuring it can handle significant power without overheating. Additionally, the device features a low on-resistance (RDS(on)) of 30mΩ at VGS = 10V, which translates to reduced power losses and improved overall efficiency in operation. This low on-resistance is maintained over a wide operating temperature range, making the MOSFET reliable in various environmental conditions.

One of the key attributes of the DMN2022UDH-7 is its fast switching speed, which is essential for high-frequency power switching applications. This capability enables the MOSFET to switch on and off quickly, reducing transition losses and improving performance in power conversion systems.

Moreover, the DMN2022UDH-7 is designed with high input impedance and low gate charge (Qg), which minimizes the drive power required and further enhances the efficiency of the system it is integrated into. This feature is particularly beneficial in battery-powered devices, where energy conservation is paramount.

For protection and reliability, the DMN2022UDH-7 incorporates built-in ESD protection, safeguarding the device against electrostatic discharge events that could otherwise damage the MOSFET. This feature is crucial for maintaining the longevity and stability of electronic components in sensitive applications.

In conclusion, the DMN2022UDH-7 from Diodes Incorporated represents a blend of efficiency, compactness, and robust performance, making it an excellent choice for designers looking to optimize their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
200+ $0.2906 $58.1200
485+ $0.2385 $115.6725
750+ $0.2310 $173.2500
1,035+ $0.2236 $231.4260
1,340+ $0.2161 $289.5740
1,790+ $0.1938 $346.9020
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,360 pieces
MOQ: 200 pcs
Order Increment : 1 pcs
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