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PMDXB600UNEZ

Part No PMDXB600UNEZ
Manufacturer Nexperia USA Inc.
Catalog FETs - Arrays
Description MOSFET 2N-CH 20V 0.6A 6DFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel
Transistor Polarity 2 N-Channel (Dual)
FET Feature Logic Level Gate
Vds - Drain-Source Breakdown Voltage 20V
Id - Continuous Drain Current 600mA
Rds On (Maximum) at Id, Vgs 620mOhm at 600mA, 4.5V
Gate Source Voltage(th) (Maximum) at Id 950mV at 250μA
Gate Charge (Qg) (Maximum) at Vgs 0.7nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds 21.3pF at 10V
Maximum Power 265mW
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package 6-XFDFN Exposed Pad
Supplier Device Package DFN1010B-6
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 733445-PMDXB600UNEZ
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian PMDXB600UNEZ CAD Model

Description

The Nexperia USA Inc. PMDXB600UNEZ is a dual N-channel transistor with a maximum power of 265mW and a drain-source breakdown voltage of 20V.

  • Maximum Power: 265mW
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 600mA
  • Rds On (Maximum) @ Id, Vgs: 620mOhm @ 600mA, 4.5V
  • Package: DFN1010B-6
  • Gate Source Voltage(th) (Maximum) @ Id: 950mV @ 250μA

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Pricing & Ordering

Quantity Unit Price Ext. Price
355+ $0.1415 $50.2325
755+ $0.1326 $100.1130
1,175+ $0.1281 $150.5175
1,680+ $0.1192 $200.2560
2,180+ $0.1147 $250.0460
2,725+ $0.1102 $300.2950
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 255,000 pieces
MOQ: 355 pcs
Order Increment : 1 pcs
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