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Same model may have multiple batches, images only for reference.
SI7945DP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI7945DP-T1-GE3

Part No SI7945DP-T1-GE3
Manufacturer Vishay
Catalog FETs - Arrays
Description MOSFET 2P-CH 30V 7A PPAK SO-8
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Reel
Status Obsolete
Transistor Polarity 2 P-Channel (Dual)
FET Feature Logic Level Gate
Vds - Drain-Source Breakdown Voltage 30V
Id - Continuous Drain Current 7A
Rds On (Maximum) at Id, Vgs 20mOhm at 10.9A, 10V
Gate Source Voltage(th) (Maximum) at Id 3V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 74nC at 10V
Maximum Power 1.4W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package PowerPAK SO-8 Dual
Supplier Device Package PowerPAK SO-8 Dual
Family Part Number SI7945
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 712148-SI7945DP-T1-GE3
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI7945DP-T1-GE3 CAD Model

Description

The Vishay Siliconix SI7945DP-T1-GE3 is a dual P-Channel logic level gate FET that comes in a PowerPAK SO-8 Dual package.

  • Mounting Type: Surface Mount
  • Operating Temperature: -55°C ~ 150°C
  • Vds - Drain-Source Breakdown Voltage: 30V
  • Id - Continuous Drain Current: 7A
  • Rds On (Maximum) @ Id, Vgs: 20mOhm @ 10.9A, 10V
  • Gate Source Voltage(th) (Maximum) @ Id: 3V @ 250μA
  • Popularity: Low
  • Status: Obsolete
  • MSL Level: 1 (Unlimited)
  • Maximum Power: 1.4W

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