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Same model may have multiple batches, images only for reference.
AON5802BG
Same model may have multiple batches, images only for reference.

AON5802BG

Part No AON5802BG
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 10A 6DFN / Mosfet Array 2 N-Channel (Dual) 30V 10A (Ta) 3.1W (Ta) Surface Mount 6-DFN-EP (2x5)
Datasheet
AON5802BG Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Alpha & Omega Semiconductor Inc.
Package Tape & Reel (TR)
Product Status Obsolete
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 10A (Ta)
Rds On (Max) @ Id, Vgs 18mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1050pF @ 15V
Power - Max 3.1W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case 6-WFDFN Exposed Pad
Supplier Device Package 6-DFN-EP (2x5)
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 785-AON5802BGTR
Standard Package 5,000
Win Source Part Number 1045143-AON5802BG
Ultra Librarian 3D Model Ultra Librarian AON5802BG CAD Model

Description

The AON5802BG is a Dual N-Channel FET that is designed for use in discrete semiconductor products manufactured by Alpha & Omega Semiconductor Inc.

  • FET Type: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250μA
  • Power - Max: 3.1W (Ta)
  • Package: 6-WFDFN Exposed Pad
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 15V

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