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Same model may have multiple batches, images only for reference.
AON3419 Real Image
Same model may have multiple batches, images only for reference.

AON3419

Part No AON3419
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description Plastic Encapsulated Device
Datasheet
AON3419 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Reel - TR
Channel Type Type P
Technology MOSFET
Drain Source Voltage 30V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 2.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 30nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1040pF @ 15V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 3.1W (Ta)
Rds On (Maximum) @ Id, Vgs 19 mOhm @ 10A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package 8-DFN (2.9x2.3)
Package 8-SMD, Flat Lead
Manufacturer Homepage www.aosmd.com
Win Source Part Number 717665-AON3419
Popularity Medium
Supply and Demand Status Balance
Family Name AON3419
Introduction Date May 30, 2013
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2023
Ultra Librarian 3D Model Ultra Librarian AON3419 CAD Model

Description

The AON3419 is a P-channel MOSFET manufactured by Alpha & Omega Semiconductor Inc.

  • Drain-Source Voltage: 30V
  • Continuous Drain Current: 10A @ 25°C
  • Maximum On-Resistance: 19 mOhm @ 10A and 10V gate-source voltage
  • Gate Threshold Voltage: 2.5V @ 250μA
  • Package: 8-DFN (2.9x2.3)
  • Power Dissipation: 3.1W @ Ta
  • Maximum Gate-Source Voltage: ±20V
  • Input Capacitance: 1040pF @ 15V
  • Suitable Applications: power management, load switches, and battery protection

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