The AP02N40H is an N-Channel enhancement mode power MOSFET from Advanced Power Electronics Corp. (APEC). It's designed for high-efficiency switching applications and offers a good balance between low on-resistance and fast switching speed.

Applications

• DC-DC Converters: Used in voltage regulation circuits to efficiently convert one DC voltage to another.
• Power Inverters: Employed in inverters to convert DC power to AC power.
• Motor Control: Integrated into motor control circuits for efficient speed and torque management.
• Power Supplies: Utilized in switched-mode power supplies (SMPS) for efficient power delivery.
• LED Lighting: Used in LED drivers for brightness control and power management.

Features

• N-Channel MOSFET: Offers efficient current conduction in N-channel configuration.
• 400V Drain-Source Voltage: Withstands drain-source voltages up to 400V.
• 2A Continuous Drain Current: Supports a continuous drain current of up to 2A.
• Low On-Resistance (RDS(on)): Features low on-resistance to minimize power loss during conduction.
• Fast Switching Speed: Enables rapid switching transitions for high-frequency applications.
• Avalanche Rated: Designed to withstand avalanche conditions for added reliability.
• RoHS Compliant: Complies with the Restriction of Hazardous Substances (RoHS) directive.

Benefits

• High Efficiency: Low on-resistance reduces power dissipation, leading to higher efficiency.
• Fast Switching: Minimizes switching losses in high-frequency applications.
• Reliable Operation: Avalanche rating enhances the device's robustness and reliability.
• Compact Design: Available in compact packages for space-saving applications.
• Environmentally Friendly: RoHS compliance ensures the device is environmentally safe.

Technical Specifications

The AP02N40H features a drain-source voltage (VDS) of 400V, a continuous drain current (ID) of 2A, and a pulsed drain current (IDM) of 6A. Its on-resistance (RDS(on)) is typically 3.8 Ohms at VGS = 10V. The gate-source voltage (VGS) is rated at ±30V. The device has a total gate charge (Qg) of 5 nC and a turn-on delay time of 5 ns. It operates over a temperature range of -55°C to +150°C. The standard package for the AP02N40H is TO-251/TO-252.