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Same model may have multiple batches, images only for reference.
SUP90N06-6M0P-E3 Real Image
Same model may have multiple batches, images only for reference.

SUP90N06-6M0P-E3

Part No SUP90N06-6M0P-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description N-Channel 60-V (D-S) MOSFET
Datasheet
SUP90N06-6M0P-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Series TrenchFET
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 60V
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 120nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 4700pF @ 30V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 3.75W (Ta), 272W (Tc)
Rds On (Maximum) @ Id, Vgs 6 mOhm @ 20A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220AB
Package TO-220-3
Win Source Part Number 1262596-SUP90N06-6M0P-E3
Manufacturer Homepage www.vishay.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SUP90N06-6M0P-E3 CAD Model

Description

The Vishay SUP90N06-6M0P-E3 is a TrenchFET N-channel MOSFET designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 3.75W (Ta) and 272W (Tc)
  • Operating Temperature: -55°C to 175°C (TJ)
  • Drain-Source Voltage: 60V
  • Continuous Drain Current: 90A (Tc)
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Maximum Gate Charge: 120nC @ 10V
  • Maximum Input Capacitance: 4700pF @ 30V
  • Package: TO-220-3
  • Popularity: medium

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