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SIR4606DP-T1-GE3

Part No SIR4606DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL 60 V (D-S) MOSFET POWE / N-Channel 60 V 10.5A (Ta), 16A (Tc) 3.7W (Ta), 31.2W (Tc) Surface Mount PowerPAK® SO-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 10.5A (Ta), 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 18.5mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 540 pF @ 30 V
Power Dissipation (Max) 3.7W (Ta), 31.2W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names 742-SIR4606DP-T1-GE3DKR,742-SIR4606DP-T1-GE3CT,742-SIR4606DP-T1-GE3TR
Standard Package 3,000
Win Source Part Number 991142-SIR4606DP-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIR4606DP-T1-GE3 CAD Model

Description

The Vishay SIR4606DP-T1-GE3 is an N-channel MOSFET transistor that comes in a PowerPAK SO-8 package.

  • Vdss: 60V
  • Id (Ta): 10.5A @ 25°C
  • Id (Tc): 16A @ 25°C
  • Rds On (Max): 18.5mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Power Dissipation (Ta): 3.7W
  • Power Dissipation (Tc): 31.2W
  • Qg (Max) @ Vgs: 13.5 nC @ 10 V
  • Ciss (Max) @ Vds: 540 pF @ 30 V
  • MSL Level: 1
  • HTSUS: 8541.29.0095

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8350 $58.4500
170+ $0.6851 $116.4670
265+ $0.6638 $175.9070
360+ $0.6423 $231.2280
470+ $0.6209 $291.8230
625+ $0.5567 $347.9375
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,020 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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